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MPS404A Datasheet, PDF (1/6 Pages) Motorola, Inc – Chopper Transistor
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MPS404A/D
Chopper Transistor
PNP Silicon
COLLECTOR
3
2
BASE
MPS404A
Motorola Preferred Device
1
EMITTER
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector – Emitter Voltage
Collector – Base Voltage
Emitter – Base Voltage
Collector Current — Continuous
Total Device Dissipation @ TA = 25°C
Derate above 25°C
VCEO
VCBO
VEBO
IC
PD
–35
–40
–25
–150
625
5.0
Vdc
Vdc
Vdc
mAdc
mW
mW/°C
Total Device Dissipation @ TC = 25°C
PD
Derate above 25°C
1.5
Watts
12
mW/°C
Operating and Storage Junction
Temperature Range
TJ, Tstg
– 55 to +150
°C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Thermal Resistance, Junction to Ambient RqJA(1)
200
Thermal Resistance, Junction to Case
RqJC
83.3
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Unit
°C/W
°C/W
OFF CHARACTERISTICS
Collector – Emitter Breakdown Voltage(2)
(IC = –10 mAdc, IB = 0)
Collector – Base Breakdown Voltage
(IC = –10 mAdc, IE = 0)
Emitter – Base Breakdown Voltage
(IE = –10 mAdc, IC = 0)
Collector Cutoff Current
(VCB = –10 Vdc, IE = 0)
Emitter Cutoff Current
(VBE = –10 Vdc, IC = 0)
v v 2. Pulse Test: Pulse Width 300 ms, Duty Cycle 2.0%.
1
2
3
CASE 29–04, STYLE 1
TO–92 (TO–226AA)
Symbol
Min
Max
Unit
V(BR)CEO –35
V(BR)CBO –40
V(BR)EBO –25
ICBO
—
IEBO
—
—
—
—
–100
–100
Vdc
Vdc
Vdc
nAdc
nAdc
Preferred devices are Motorola recommended choices for future use and best overall value.
Motorola Small–Signal Transistors, FETs and Diodes Device Data
1
© Motorola, Inc. 1996