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MPS3906 Datasheet, PDF (1/8 Pages) Motorola, Inc – General Purpose Transistor | |||
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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
General Purpose Transistor
PNP Silicon
Order this document
by MPS3906/D
MPS3906
COLLECTOR
3
2
BASE
1
EMITTER
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector â Emitter Voltage
Collector â Base Voltage
Emitter â Base Voltage
Collector Current â Continuous
Total Device Dissipation @ TA = 25°C
Derate above 25°C
VCEO
VCBO
VEBO
IC
PD
â40
â40
â5.0
â200
625
5.0
Vdc
Vdc
Vdc
mAdc
mW
mW/°C
Total Device Dissipation @ TC = 25°C
PD
Derate above 25°C
1.5
Watts
12
mW/°C
Operating and Storage Junction
Temperature Range
TJ, Tstg
â 55 to +150
°C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Ambient
RqJA
200
Thermal Resistance, Junction to Case
RqJC
83.3
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
°C/W
°C/W
OFF CHARACTERISTICS
Collector â Emitter Breakdown Voltage(1)
(IC = â1.0 mAdc, IB = 0)
Collector â Base Breakdown Voltage
(IC = â10 mAdc, IE = 0)
Emitter â Base Breakdown Voltage
(IE = â10 mAdc, IC = 0)
Collector Cutoff Current
(VCE = â30 Vdc, VEB(off) = â3.0 Vdc)
Base Cutoff Current
(VCE = â30 Vdc, VEB(off) = â3.0 Vdc)
1. Pulse Test: Pulse Width = 300 ms; Duty Cycle = 2.0%.
1
23
CASE 29â04, STYLE 1
TOâ92 (TOâ226AA)
Symbol
Min
Max
Unit
V(BR)CEO â40
â
Vdc
V(BR)CBO â40
â
Vdc
V(BR)EBO â5.0
â
Vdc
ICEX
â
â50
nAdc
IBL
â
â50
nAdc
REV 1
©MMotootorroollaa,
SmallâSignal
Inc. 1996
Transistors,
FETs
and
Diodes
Device
Data
1
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