MPS3646 Datasheet, PDF (1/6 Pages) Motorola, Inc – Switching Transistor

MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MPS3646/D
Switching Transistor
NPN Silicon
MPS3646
Motorola Preferred Device
COLLECTOR
3
2
BASE
1
EMITTER
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector – Emitter Voltage
Collector – Emitter Voltage
Collector – Base Voltage
Emitter – Base Voltage
Collector Current — Continuous
— 10 ms Pulse
VCEO
15
Vdc
VCES
40
Vdc
VCBO
40
Vdc
VEBO
5.0
Vdc
IC
300
mAdc
500
Total Device Dissipation @ TA = 25°C
PD
Derate above 25°C
625
mW
5.0
mW/°C
Total Device Dissipation @ TC = 25°C
PD
Derate above 25°C
1.5
Watts
12
mW/°C
Operating and Storage Junction
Temperature Range
TJ, Tstg
– 55 to +150
°C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Ambient
R_qJA
200
Thermal Resistance, Junction to Case
R_qJC
83.3
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
°C/W
°C/W
OFF CHARACTERISTICS
Collector – Emitter Breakdown Voltage
(IC = 100 mAdc, VBE = 0)
Collector – Emitter Sustaining Voltage(1)
(IC = 10 mAdc, IB = 0)
Collector – Base Breakdown Voltage
(IC = 100 mAdc, IE = 0)
Emitter – Base Breakdown Voltage
(IE = 100 mAdc, IC = 0)
Collector Cutoff Current
(VCE = 20 Vdc, VBE = 0)
(VCE = 20 Vdc, VBE = 0, TA = 65°C)
v v 1. Pulse Test: Pulse Width 300 ms; Duty Cycle 2.0%.
Symbol
V(BR)CES
VCEO(sus)
V(BR)CBO
V(BR)EBO
ICES
1
23
CASE 29–04, STYLE 1
TO–92 (TO–226AA)
Min
Max
Unit
40
—
Vdc
15
—
Vdc
40
—
Vdc
5.0
—
Vdc
mAdc
—
0.5
—
3.0
Preferred devices are Motorola recommended choices for future use and best overall value.
©^MM^oto^oto^rr^oo^ll^aa,
Small–Signal
Inc. 1996
Transistors,
FETs
and
Diodes
Device
Data
1