MPS3640 Datasheet, PDF (1/4 Pages) Motorola, Inc – Switching Transistor

MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MPS3640/D
Switching Transistor
PNP Silicon
COLLECTOR
3
MPS3640
2
BASE
1
EMITTER
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector – Emitter Voltage
Collector – Base Voltage
Emitter – Base Voltage
Collector Current — Continuous
Total Device Dissipation @ TA = 25°C
Derate above 25°C
VCEO
VCBO
VEBO
IC
PD
–12
Vdc
–12
Vdc
–4.0
Vdc
–80
mAdc
625
mW
5.0
mW/°C
Total Device Dissipation @ TC = 25°C
PD
Derate above 25°C
1.5
Watts
12
mW/°C
Operating and Storage Junction
Temperature Range
TJ, Tstg
– 55 to +150
°C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Ambient
R_qJA
200
Thermal Resistance, Junction to Case
R_qJC
83.3
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
°C/W
°C/W
OFF CHARACTERISTICS
Collector – Emitter Breakdown Voltage
(IC = –100 µAdc, VBE = 0)
Collector – Emitter Sustaining Voltage(1)
(IC = –10 mAdc, IB = 0)
Collector – Base Breakdown Voltage
(IC = –100 mAdc, IE = 0)
Emitter – Base Breakdown Voltage
(IE = –100 mAdc, IC = 0)
Collector Cutoff Current
(VCE = –6.0 Vdc, VBE = 0)
(VCE = –6.0 Vdc, VBE = 0, TA = 65°C)
Base Current
(VCE = –6.0 Vdc, VEB = 0)
v v 1. Pulse Test: Pulse Width 300 ms, Duty Cycle 2.0%.
Symbol
V(BR)CES
VCEO(sus)
V(BR)CBO
V(BR)EBO
ICES
IB
1
2
3
CASE 29–04, STYLE 1
TO–92 (TO–226AA)
Min
Max
Unit
–12
—
Vdc
–12
—
Vdc
–12
—
Vdc
–4.0
—
Vdc
µAdc
—
–0.01
—
–1.0
—
–10
nAdc
Motorola Small–Signal Transistors, FETs and Diodes Device Data
1
© Motorola, Inc. 1996