MPS3638A Datasheet, PDF (1/8 Pages) Motorola, Inc – Switching Transistor

MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MPS3638A/D
Switching Transistor
PNP Silicon
COLLECTOR
3
2
BASE
MPS3638A
1
EMITTER
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector – Emitter Voltage
Collector – Emitter Voltage
Collector – Base Voltage
Emitter – Base Voltage
Collector Current — Continuous
Total Device Dissipation @ TA = 25°C
Derate above 25°C
VCEO
VCES
VCBO
VEBO
IC
PD
–25
–25
–25
–4.0
–500
625
5.0
Vdc
Vdc
Vdc
Vdc
mAdc
mW
mW/°C
Total Device Dissipation @ TC = 25°C
PD
Derate above 25°C
1.5
Watts
12
mW/°C
Operating and Storage Junction
Temperature Range
TJ, Tstg
– 55 to +150
°C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Thermal Resistance, Junction to Ambient
R_qJA(1)
200
Thermal Resistance, Junction to Case
R_qJC
83.3
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Unit
°C/W
°C/W
Symbol
OFF CHARACTERISTICS
Collector – Emitter Breakdown Voltage
(IC = –100 mAdc, VBE = 0)
Collector – Emitter Sustaining Voltage(2)
(IC = –10 mAdc, IB = 0)
Collector – Base Breakdown Voltage
(IC = –100 mAdc, IE = 0)
Emitter – Base Breakdown Voltage
(IE = –100 mAdc, IC = 0)
Collector Cutoff Current
(VCE = –15 Vdc, VBE = 0)
(VCE = –15 Vdc, VBE = 0, TA = –65°C)
Emitter Cutoff Current
(VEB = –3.0 V, IC = 0)
Base Current
(VCE = –15 Vdc, VBE = 0)
V(BR)CES
VCEO(sus)
V(BR)CBO
V(BR)EBO
ICES
IEBO
IB
v v ^{1. RqJA is measured with the device soldered into a typical printed circuit board.}
2. Pulse Test: Pulse Width 300 ms; Duty Cycle 2.0%.
1
23
CASE 29–04, STYLE 1
TO–92 (TO–226AA)
Min
Max
Unit
–25
—
Vdc
–25
—
Vdc
–25
—
Vdc
–4.0
—
Vdc
mAdc
—
–0.035
—
–2.0
—
–35
nA
—
–0.035
mAdc
(Replaces MPS3638/D)
©^MM^oto^oto^rr^oo^ll^aa,
Small–Signal
Inc. 1997
Transistors,
FETs
and
Diodes
Device
Data
1