MPS2907 Datasheet, PDF (1/6 Pages) Motorola, Inc – General Purpose Transistors

MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MPS2907/D
General Purpose Transistors
PNP Silicon
COLLECTOR
3
MPS2907
MPS2907A*
*Motorola Preferred Device
2
BASE
1
EMITTER
MAXIMUM RATINGS
Rating
Symbol MPS2907 MPS2907A Unit
Collector – Emitter Voltage
Collector – Base Voltage
Emitter – Base Voltage
Collector Current — Continuous
Total Device Dissipation
@ TA = 25°C
Derate above 25°C
VCEO
VCBO
VEBO
IC
PD
–40
–60
–60
–5.0
–600
625
5.0
Vdc
Vdc
Vdc
mAdc
mW
mW/°C
Total Device Dissipation
@ TC = 25°C
Derate above 25°C
PD
1.5
Watts
12
mW/°C
Operating and Storage Junction
TJ, Tstg
– 500 to +150
°C
Temperature Range
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Ambient
R_qJA
200
Thermal Resistance, Junction to Case
R_qJC
83.3
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
°C/W
°C/W
OFF CHARACTERISTICS
Collector – Emitter Breakdown Voltage(1)
(IC = –10 mAdc, IB = 0)
Collector – Base Breakdown Voltage
(IC = –10 mAdc, IE = 0)
Emitter – Base Breakdown Voltage
(IE = –10 mAdc, IC = 0)
Collector Cutoff Current
(VCE = –30 Vdc, VEB(off) = –0.5 Vdc)
Collector Cutoff Current
(VCB = –50 Vdc, IE = 0)
(VCB = –50 Vdc, IE = 0, TA = 150°C)
MPS2907
MPS2907A
MPS2907
MPS2907A
MPS2907
MPS2907A
Base Current
(VCE = –30 Vdc, VEB(off) = –0.5 Vdc)
v v 1. Pulse Test: Pulse Width 300 ms, Duty Cycle 2.0%.
Preferred devices are Motorola recommended choices for future use and best overall value.
Symbol
V(BR)CEO
V(BR)CBO
V(BR)EBO
ICEX
ICBO
IB
1
2
3
CASE 29–04, STYLE 1
TO–92 (TO–226AA)
Min
Max
Unit
–40
—
Vdc
–60
—
–60
—
Vdc
–5.0
—
Vdc
—
–50
nAdc
µAdc
—
–0.02
—
–0.01
—
–20
—
–10
—
–50
nAdc
Motorola Small–Signal Transistors, FETs and Diodes Device Data
1
© Motorola, Inc. 1996