MPQ7091 Datasheet, PDF (1/4 Pages) Motorola, Inc – Quad Amplifier Transistors

MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MPQ7091/D
Quad Amplifier
Transistors
PNP Silicon
14 13 12 11 10 9 8
COMPLEMENTARY
1234567
TYPE B
MAXIMUM RATINGS
Rating
Symbol MPQ7091 MPQ7093 Unit
Collector – Emitter Voltage
Collector – Base Voltage
Emitter – Base Voltage
Collector Current — Continuous
VCEO
VCBO
VEBO
IC
–150
–250
–150
–250
–5.0
–500
Each Die
Four Die
Equal
Power
Vdc
Vdc
Vdc
mAdc
Total Device Dissipation
@ TA = 25°C
Derate above 25°C
PD
750
5.98
1700
13.6
mW
mW/°C
Total Device Dissipation
@ TC = 25°C
Derate above 25°C
PD
1.25
10
3.2
Watts
25.6
mW/°C
Operating and Storage Junction
Temperature Range
TJ, Tstg
–55 to +150
°C
THERMAL CHARACTERISTICS
Characteristic
Junction to Junction to Unit
Case
Ambient
Thermal Resistance
Each Die
100
Effective, 4 Die
39
167
°C/W
73.5
°C/W
Coupling Factors
Q1–Q4 or Q2–Q3
46
Q1–Q2 or Q3–Q4
5.0
56
%
10
%
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
OFF CHARACTERISTICS
Collector – Emitter Breakdown Voltage
(IC = –1.0 mAdc, IB = 0)
MPQ7091
MPQ7093
V(BR)CEO
Collector – Base Breakdown Voltage
(IC = –100 mAdc, IE = 0)
MPQ7091
MPQ7093
V(BR)CBO
Emitter – Base Breakdown Voltage
(IE = –100 mAdc, IC = 0)
Collector Cutoff Current
(VCB = –120 Vdc, IE = 0)
MPQ7091
MPQ7093
V(BR)EBO
ICBO
Emitter Cutoff Current
(VEB = –3.0 Vdc, IC = 0)
IEBO
Min
–150
–250
–150
–250
–5.0
—
—
—
MPQ7091
MPQ7093*
*Motorola Preferred Device
14
1
CASE 646–06, STYLE 1
TO–116
Typ
Max
Unit
Vdc
—
—
—
—
Vdc
—
—
—
—
Vdc
—
—
nAdc
—
–250
—
–250
nAdc
—
–100
Preferred devices are Motorola recommended choices for future use and best overall value.
©^MM^oto^oto^rr^oo^ll^aa,
Small–Signal
Inc. 1997
Transistors,
FETs
and
Diodes
Device
Data
1