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MPIC2113 Datasheet, PDF (1/6 Pages) Motorola, Inc – HIGH AND LOW SIDE DRIVER
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
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by MPIC2113/D
Power Products Division
Advance Information
HIGH AND LOW SIDE DRIVER
The MPIC2113 is a high voltage, high speed, power MOSFET and IGBT driver
with independent high and low side referenced output channels. Proprietary HVIC
and latch immune CMOS technologies enable ruggedized monolithic construction.
Logic inputs are compatible with standard CMOS or LSTTL outputs. The output
drivers feature a high pulse current buffer stage designed for minimum driver
cross–conduction. Propagation delays are matched to simplify use in high frequen-
cy applications. The floating channel can be used to drive an N–channel power
MOSFET or IGBT in the high side configuration which operates from 10 to 600
volts.
• Floating Channel Designed for Bootstrap Operation
• Fully Operational to +600 V
• Tolerant to Negative Transient Voltage
• dV/dt Immune
• Gate Drive Supply Range from 10 to 20 V
• Undervoltage Lockout for Both Channels
• Separate Logic Supply
• Operating Supply Range from 5 to 20 V
• Logic and Power Ground Operating Offset Range from –5 to +5 V
• CMOS Schmitt–triggered Inputs with Pull–down
• Cycle by Cycle Edge–triggered Shutdown Logic
• Matched Propagation Delay for Both Channels
• Outputs In Phase with Inputs
VOFFSET
IO+/–
VOUT
ton/off (typical)
Delay Matching
PRODUCT SUMMARY
600 V MAX
2 A/2 A
10 – 20 V
120 & 94 ns
10 ns
MPIC2113
HIGH AND LOW
SIDE DRIVER
14
1
P SUFFIX
PLASTIC PACKAGE
CASE 646–06
16
1
DW SUFFIX
PLASTIC PACKAGE
CASE 751G–02
SOIC – WIDE
ORDERING INFORMATION
Device
MPIC2113DW
Package
SOIC WIDE
MPIC2113P
PDIP
8
9 VDD
10 HIN
11 SD
12 LIN
13 VSS
14
HO 7
VB 6
VS 5
4
VCC 3
COM 2
LO 1
14 LEADS PDIP MPIC2113P
PIN CONNECTIONS
(TOP VIEW)
9
10
11 VDD
12 HIN
13 SD
14 LIN
15 VSS
16
HO 8
VB 7
VS 6
5
4
VCC 3
COM 2
LO 1
16 LEADS SOIC (WIDE BODY)
MPIC2113DW
This document contains information on a new product. Specifications and information herein are subject
to change without notice.
© MMoototororloa,laIncT.M19O96S Power MOSFET Transistor Device Data
1