MPF930 Datasheet, PDF (1/4 Pages) Motorola, Inc – TMOS Switching

MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
TMOS Switching
N–Channel — Enhancement
3 DRAIN
2
GATE
Order this document
by MPF930/D
MPF930
MPF960
MPF990
1 SOURCE
MAXIMUM RATINGS
Rating
Symbol MPF930 MPF960 MPF990 Unit
Drain – Source Voltage
VDS
35
60
90
Vdc
Drain – Gate Voltage
VDG
35
60
90
Vdc
Gate–Source Voltage
— Continuous
VGS
± 20
Vdc
— Non–repetitive (tp ≤ 50 µs) VGSM
± 40
Vpk
Drain Current
Adc
Continuous(1)
ID
2.0
Pulsed(2)
IDM
3.0
Total Device Dissipation
PD
@ TA = 25°C
Derate above 25°C
1.0
Watts
8.0
mW/°C
Operating and Storage Junction TJ, Tstg
– 55 to 150
°C
Temperature Range
Thermal Resistance
θ_JA
125
°C/W
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
OFF CHARACTERISTICS
Drain–Source Breakdown Voltage
(VGS = 0, ID = 10 µAdc)
MPF930
MPF960
MPF990
V(BR)DSX
35
60
90
Gate Reverse Current (VGS = 15 Vdc, VDS = 0)
ON CHARACTERISTICS(2)
Zero–Gate–Voltage Drain Current
(VDS = Maximum Rating, VGS = 0)
Gate Threshold Voltage
(ID = 1.0 mAdc, VDS = VGS)
Drain–Source On–Voltage (VGS = 10 Vdc)
(ID = 0.5 Adc)
(ID = 1.0 Adc)
(ID = 2.0 Adc)
MPF930
MPF960
MPF990
MPF930
MPF960
MPF990
MPF930
MPF960
MPF990
IGSS
—
IDSS
—
VGS(Th)
1.0
VDS(on)
—
—
—
—
—
—
—
—
—
v v ^{1. The Power Dissipation of the package may result in a lower continuous drain current.}
2. Pulse Test: Pulse Width 300 µs, Duty Cycle 2.0%.
1
2
3
CASE 29–05, STYLE 22
TO–92 (TO–226AE)
Typ
Max
Unit
Vdc
—
—
—
—
—
—
—
50
nAdc
—
10
µAdc
—
3.5
Vdc
Vdc
0.4
0.7
0.6
0.8
0.6
1.2
0.9
1.4
1.2
1.7
1.2
2.4
2.2
3.0
2.8
3.5
2.8
4.8
REV 2
©^MM^oto^oto^rr^oo^ll^aa,
Small–Signal
Inc. 1997
Transistors,
FETs
and
Diodes
Device
Data
1