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MMSF7P03HD Datasheet, PDF (1/10 Pages) Motorola, Inc – SINGLE TMOS POWER MOSFET 30 VOLTS
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
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by MMSF7P03HD/D
™ Designer's Data Sheet
Medium Power Surface Mount Products
TMOS Single P-Channel
Field Effect Transistors
Single HDTMOS are an advanced series of power MOSFETs
which utilize Motorola’s High Cell Density TMOS process.
HDTMOS devices are designed for use in low voltage, high speed
switching applications where power efficiency is important. Typical
applications are dc–dc converters, and power management in
portable and battery powered products such as computers,
printers, cellular and cordless phones. They can also be used for
low voltage motor controls in mass storage products such as disk
drives and tape drives.
• Low RDS(on) Provides Higher Efficiency and Extends Battery Life
• Logic Level Gate Drive — Can Be Driven by Logic ICs
• Miniature SO–8 Surface Mount Package — Saves Board Space
• Diode Is Characterized for Use In Bridge Circuits
G
• Diode Exhibits High Speed, With Soft Recovery
• IDSS Specified at Elevated Temperature
• Mounting Information for SO–8 Package Provided
MMSF7P03HD
Motorola Preferred Device
SINGLE TMOS
POWER MOSFET
30 VOLTS
RDS(on) = 35 mW
™
D
S
CASE 751–05, Style 13
SO–8
Source 1 8 Drain
Source 2 7 Drain
Source 3 6 Drain
Gate 4 5 Drain
Top View
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating
Symbol
Value
Unit
Drain–to–Source Voltage
Gate–to–Source Voltage — Continuous
Drain Current — Continuous @ TA = 25°C
Drain Current — Single Pulse (tp ≤ 10 µs)
Source Current — Continuous @ TA = 25°C
Total Power Dissipation @ TA = 25°C (1)
Operating and Storage Temperature Range
W Single Pulse Drain–to–Source Avalanche Energy – STARTING TJ = 25°C
(VDD = 30 Vdc, VGS = 5.0 Vdc, VDS = 32 Vdc, IL = 10 Apk, L = 10 mH, RG = 25 )
Thermal Resistance — Junction–to–Ambient
Maximum Temperature for Soldering
VDSS
VGS
ID
IDM
IS
PD
TJ, Tstg
EAS
30
± 20
7.0
50
2.3
2.5
– 55 to 150
5000
Vdc
Vdc
Adc
Apk
Adc
Watts
°C
mJ
RθJA
T
50
°C/W
260
°C
DEVICE MARKING
S7P03
(1) When mounted on 1 inch square FR–4 or G–10 (VGS = 10 V @ 10 seconds)
ORDERING INFORMATION
Device
Reel Size
Tape Width
Quantity
MMSF7P03HDR2
13″
12 mm embossed tape
2500 units
Designer’s Data for “Worst Case” Conditions — The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit
curves — representing boundaries on device characteristics — are given to facilitate “worst case” design.
Preferred devices are Motorola recommended choices for future use and best overall value.
Designer’s and HDTMOS are trademarks of Motorola, Inc. TMOS is a registered trademark of Motorola, Inc.
Thermal Clad is a trademark of the Bergquist Company.
REV 2
©MMoottoororolal,aInTc.M19O9S7 Power MOSFET Transistor Device Data
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