MMSF7N03Z Datasheet, PDF (1/10 Pages) Motorola, Inc – SINGLE TMOS POWER MOSFET 7.5 AMPERES 30 VOLTS

MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
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by MMSF7N03Z/D
™ Designer's Data Sheet
Medium Power Surface Mount Products
TMOS Single N-Channel with
Monolithic Zener ESD
Protected Gate
EZFETs™ are an advanced series of power MOSFETs which utilize
Motorola’s High Cell Density TMOS process and contain monolithic
back–to–back zener diodes. These zener diodes provide protection
against ESD and unexpected transients. These miniature surface
mount MOSFETs feature ultra low RDS(on) amd true logic level
performance. They are capable of withstanding high energy in the
avalanche and commutation modes and the drain–to–source diode
has a very low reverse recovery time. EZFET devices are designed
for use in low voltage, high speed switching applications where power
efficiency is important. Typical applications are dc–dc converters, and
power management in portable and battery powered products such as
computers, printers, cellular and cordless phones. They can also be
used for low voltage motor controls in mass storage products such as
G
disk drives and tape drives.
MMSF7N03Z
Motorola Preferred Device
SINGLE TMOS
POWER MOSFET
7.5 AMPERES
30 VOLTS
RDS(on) = 0.030 OHM
™
D
CASE 751–05, Style 12
SO–8
• Zener Protected Gates Provide Electrostatic Discharge Protection
• Ultra Low RDS(on) Provides Higher Efficiency and Extends Battery Life
• Designed to withstand 200V Machine Model and 2000V Human Body Model
• Logic Level Gate Drive — Can Be Driven by Logic ICs
• Miniature SO–8 Surface Mount Package — Saves Board Space
• Diode Is Characterized for Use In Bridge Circuits
• Diode Exhibits High Speed, With Soft Recovery
• IDSS Specified at Elevated Temperature
• Mounting Information for SO–8 Package Provided
S
Source 1 8 Drain
Source 2 7 Drain
Source 3 6 Drain
Gate 4 5 Drain
Top View
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating
Symbol
Value
Unit
Drain–to–Source Voltage
Drain–to–Gate Voltage (RGS = 1.0 MΩ)
Gate–to–Source Voltage — Continuous
Drain Current — Continuous @ TA = 25°C (1)
Drain Current — Continuous @ TA = 70°C (1)
Drain Current — Pulsed Drain Current (3)
Total Power Dissipation @ TA = 25°C (1)
Linear Derating Factor (1)
VDSS
VDGR
VGS
ID
ID
IDM
PD
30
Vdc
30
Vdc
± 15
Vdc
7.5
Adc
5.6
60
Apk
2.5
Watts
20
mW/°C
Total Power Dissipation @ TA = 25°C (2)
Linear Derating Factor (2)
PD
1.6
Watts
12
mW/°C
Operating and Storage Temperature Range
Single Pulse Drain–to–Source Avalanche Energy — Starting TJ = 25°C
(VDD = 30 Vdc, VGS = 5.0 Vdc, Peak IL = 15 Apk, L = 4.0 mH, RG = 25 Ω)
Thermal Resistance — Junction to Ambient (1)
— Junction to Ambient (2)
TJ, Tstg
EAS
R_θJA
– 55 to 150
450
50
80
°C
mJ
°C/W
(1) When mounted on 1 inch square FR–4 or G–10 board (VGS = 10 V, @ 10 Seconds)
(2) When mounted on 1 inch square FR–4 or G–10 board (VGS = 10 V, @ Steady State)
(3) Repetitive rating; pulse width limited by maximum junction temperature.
DEVICE MARKING
ORDERING INFORMATION
S7N03Z
Device
MMSF7N03ZR2
Reel Size
13″
Tape Width
12 mm embossed tape
Quantity
2500 units
Designer’s Data for “Worst Case” Conditions — The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit
curves — representing boundaries on device characteristics — are given to facilitate “worst case” design.
Preferred devices are Motorola recommended choices for future use and best overall value.
HDTMOS and EZFET are trademarks of Motorola, Inc. TMOS is a registered trademark of Motorola, Inc. Thermal Clad is a trademark of the
Bergquist Company.
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