MMSF10N03Z Datasheet, PDF (1/10 Pages) Motorola, Inc – SINGLE TMOS POWER MOSFET 10 AMPERES 30 VOLTS

MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
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by MMSF10N03Z/D
Advance Information
Medium Power Surface Mount Products
TMOS Single N-Channel with
MMSF10N03Z
Motorola Preferred Device
Monolithic Zener ESD Protected Gate
EZFETs™ are an advanced series of power MOSFETs which utilize
Motorola’s High Cell Density TMOS process and contain monolithic
back–to–back zener diodes. These zener diodes provide protection
against ESD and unexpected transients. These miniature surface mount
MOSFETs feature ultra low RDS(on) and true logic level performance. They
are capable of withstanding high energy in the avalanche and commuta-
™
tion modes and the drain–to–source diode has a very low reverse recovery
time. EZFET devices are designed for use in low voltage, high speed
switching applications where power efficiency is important. Typical
applications are dc–dc converters, and power management in portable
and battery powered products such as computers, printers, cellular and
cordless phones. They can also be used for low voltage motor controls in
mass storage products such as disk drives and tape drives.
• Zener Protected Gates Provide Electrostatic Discharge Protection
• Designed to Withstand 200 V Machine Model and 2000 V Human Body Model ^D
• Ultra Low RDS(on) Provides Higher Efficiency and Extends Battery Life
• Logic Level Gate Drive — Can Be Driven by Logic ICs
• Miniature SO–8 Surface Mount Package — Saves Board Space
• Diode Is Characterized for Use In Bridge Circuits
G
• Diode Exhibits High Speed, With Soft Recovery
• IDSS Specified at Elevated Temperature
• Mounting Information for SO–8 Package Provided
S
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Parameter
SINGLE TMOS
POWER MOSFET
10 AMPERES
30 VOLTS
RDS(on) = 13 mW
CASE 751–05, Style 12
SO–8
Source
18
Drain
Source 2 7 Drain
Source 3 6 Drain
Gate 4 5 Drain
Top View
Symbol
Max
Unit
Drain–to–Source Voltage
Drain–to–Gate Voltage (RGS = 1.0 MΩ)
Gate–to–Source Voltage — Continuous
Drain Current — Continuous @ TA = 25°C ⁽¹⁾
Drain Current — Continuous @ TA = 70°C ⁽¹⁾
Drain Current — Pulsed Drain Current ⁽³⁾
Total Power Dissipation @ TA = 25°C ⁽¹⁾
Linear Derating Factor @ TA = 25°C ⁽¹⁾
Total Power Dissipation @ TA = 25°C ⁽²⁾
Linear Derating Factor @ TA = 25°C ⁽²⁾
Operating and Storage Temperature Range
W Single Pulse Drain–to–Source Avalanche Energy — Starting TJ = 25°C
(VDD = 30 Vdc, VGS = 10 Vdc, IL = 10 Apk, L = 20 mH, RG = 25 )
THERMAL RESISTANCE
VDSS
VDGR
VGS
ID
ID
IDM
PD
PD
TJ, Tstg
EAS
30
30
± 20
10
7.7
50
2.5
20
1.6
12
– 55 to 150
1000
Vdc
Vdc
Vdc
Adc
Watts
mW/°C
Watts
mW/°C
°C
mJ
Junction–to–Ambient ⁽¹⁾
Junction–to–Ambient ⁽²⁾
Parameter
Symbol
Typ
R_qJA
—
—
(1) When mounted on 1” square FR4 or G–10 board (VGS = 10 V, @ 10 seconds).
(2) When mounted on minimum recommended FR4 or G–10 board (VGS = 10 V, @ Steady State).
(3) Repetitive rating; pulse width limited by maximum junction temperature.
DEVICE MARKING
ORDERING INFORMATION
Max
Unit
50
°C/W
80
S10N3Z
Device
MMSF10N03ZR2
Reel Size
13″
Tape Width
12 mm embossed tape
This document contains information on a new product. Specifications and information herein are subject to change without notice.
HDTMOS is a trademark of Motorola, Inc. TMOS is a registered trademark of Motorola, Inc.
Thermal Clad is a trademark of the Bergquist Company.
Preferred devices are Motorola recommended choices for future use and best overall value.
Quantity
2500 units
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