MMPQ3725 Datasheet, PDF (1/4 Pages) Motorola, Inc – Quad Core Drier Transistor

MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MMPQ3725/D
Quad Core Driver
Transistor
NPN Silicon
1
16
2
15
3
14
4
13
5
12
6
11
7
10
8
9
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector – Emitter Voltage
VCEO
40
Vdc
Collector – Emitter Voltage
VCES
60
Vdc
Emitter – Base Voltage
VEB
5.0
Vdc
Collector Current — Continuous
IC
1.0
Adc
Operating and Storage Junction
TJ, Tstg
–55 to +150
°C
Temperature Range
Each
Transistor
Four
Transistors
Equal Power
Total Power Dissipation @ TA = 25°C
PD
0.6
Derate above 25°C
4.8
1.4
Watts
11.2
mW/°C
Power Dissipation @ TC = 25°C
Derate above 25°C
PD
1.0
8.0
2.5
Watts
2.0
mW/°C
Operating and Storage Junction
TJ, Tstg
–55 to +150
°C
Temperature Range
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
OFF CHARACTERISTICS
Collector – Emitter Breakdown Voltage(1)
(IC = 10 mAdc, IB = 0)
Collector – Base Breakdown Voltage
(IC = 100 mAdc, VBE = 0)
Emitter – Base Breakdown Voltage
(IE = 10 mAdc, IC = 0)
Collector Cutoff Current
(VCB = 40 Vdc, IE = 0)
v v 1. Pulse Test: Pulse Width 300 ms; Duty Cycle 2.0%.
V(BR)CEO
V(BR)CES
V(BR)EBO
ICBO
MMPQ3725
Motorola Preferred Device
16
1
CASE 751B–05, STYLE 4
SO–16
Min
Typ
Max
Unit
40
—
—
Vdc
60
—
—
Vdc
5.0
—
—
Vdc
—
—
0.5
mAdc
Thermal Clad is a trademark of the Bergquist Company
Preferred devices are Motorola recommended choices for future use and best overall value.
REV 1
©^MM^oto^oto^rr^oo^ll^aa,
Small–Signal
Inc. 1996
Transistors,
FETs
and
Diodes
Device
Data
1