MMPQ3467 Datasheet, PDF (1/4 Pages) Motorola, Inc – Quad Memory Driver Transistor

MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MMPQ3467/D
Quad Memory Driver
Transistor
PNP Silicon
1
16
2
15
3
14
4
13
5
12
6
11
7
10
8
9
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector – Emitter Voltage
Collector – Base Voltage
Emitter – Base Voltage
Collector Current — Continuous
VCEO
VCB
VEB
IC
–40
Vdc
–40
Vdc
–5.0
Vdc
–1.0
Adc
Each
Transistor
Four
Transistors
Equal Power
Power Dissipation @ TA = 25°C
PD
0.52
Derate above 25°C
4.2
1.2
Watts
9.6
mW/°C
Power Dissipation @ TC = 25°C
PD
1.0
Derate above 25°C
8.0
2.5
Watts
20
mW/°C
Operating and Storage Junction
TJ, Tstg
–55 to +150
°C
Temperature Range
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
OFF CHARACTERISTICS
Collector – Emitter Breakdown Voltage(1)
(IC = –10 mAdc, IB = 0)
V(BR)CEO
Collector – Base Breakdown Voltage
(IC = –10 mAdc, IE = 0)
V(BR)CBO
Emitter – Base Breakdown Voltage
(IE = –10 mAdc, IC = 0)
V(BR)EBO
Collector Cutoff Current
(VCB = –30 Vdc, IE = 0)
ICBO
Emitter Cutoff Current
(VEB = –3.0 Vdc, IC = 0)
v v 1. Pulse Test: Pulse Width 300 ms; Duty Cycle 2.0%.
IEBO
MMPQ3467
Motorola Preferred Device
16
1
CASE 751B–05, STYLE 4
SO–16
Min
Typ
Max
Unit
–40
—
—
Vdc
–40
—
—
Vdc
–5.0
—
—
Vdc
—
—
–200
nAdc
—
—
–200
nAdc
Thermal Clad is a trademark of the Bergquist Company
Preferred devices are Motorola recommended choices for future use and best overall value.
REV 2
©^MM^oto^oto^rr^oo^ll^aa,
Small–Signal
Inc. 1996
Transistors,
FETs
and
Diodes
Device
Data
1