MMPQ2222 Datasheet, PDF (1/4 Pages) Motorola, Inc – Quad General Purpose Transistors

MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MMPQ2222/D
Quad General Purpose
Transistors
NPN Silicon
1
16
2
15
3
14
4
13
5
12
6
11
7
10
8
9
MAXIMUM RATINGS
Rating
Symbol MMPQ2222 MMPQ2222A Unit
Collector – Emitter Voltage
Collector – Base Voltage
Emitter – Base Voltage
Collector Current — Continuous
VCEO
VCB
VEB
IC
30
40
60
75
5.0
500
Each
Transistor
Four
Transistors
Equal Power
Vdc
Vdc
Vdc
mAdc
Total Power Dissipation
@ TA = 25°C
Derate above 25°C
PD
0.52
4.2
Watts
1.0
8.0
mW/°C
Total Power Dissipation
@ TC = 25°C
Derate above 25°C
PD
0.8
6.4
Watts
2.4
19.2
mW/°C
Operating and Storage
TJ, Tstg
–55 to +150
°C
Junction Temperature Range
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
OFF CHARACTERISTICS
Collector – Emitter Breakdown Voltage(1)
(IC = 10 mAdc, IB = 0)
MMPQ2222
MMPQ2222A
V(BR)CEO
Collector – Base Breakdown Voltage
(IC = 10 mAdc, IE = 0)
MMPQ2222
MMPQ2222A
V(BR)CBO
Emitter – Base Breakdown Voltage
(IB = 10 mAdc, IC = 0)
V(BR)EBO
Collector Cutoff Current
(VCB = 50 Vdc, IE = 0)
(VCB = 60 Vdc, IE = 0)
MMPQ2222
MMPQ2222A
Emitter Cutoff Current
(VEB = 3.0 Vdc, IC = 0)
v v 1. Pulse Test: Pulse Width 300 ms; Duty Cycle 2.0%.
ICBO
IEBO
MMPQ2222
MMPQ2222A*
*Motorola Preferred Device
16
1
CASE 751B–05, STYLE 4
SO–16
Min
Typ
Max
Unit
30
—
—
Vdc
40
—
—
60
—
—
Vdc
75
—
—
5.0
—
—
Vdc
—
—
—
nAdc
—
—
50
—
—
10
—
—
100
nAdc
Thermal Clad is a trademark of the Bergquist Company
Preferred devices are Motorola recommended choices for future use and best overall value.
REV 1
©^MM^oto^oto^rr^oo^ll^aa,
Small–Signal
Inc. 1996
Transistors,
FETs
and
Diodes
Device
Data
1