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MMJT9410 Datasheet, PDF (1/4 Pages) Motorola, Inc – Bipolar Power Transistors | |||
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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MMJT9410/D
Preliminary Data Sheet
Bipolar Power Transistors
NPN Silicon
⢠Collector âEmitter Sustaining Voltage â VCEO(sus)
= 30 Vdc (Min) @ IC = 10 mAdc
⢠High DC Current Gain â hFE
= 85 (Min) @ IC = 1.0 Adc
= 60 (Min) @ IC = 3.0 Adc
⢠Low Collector âEmitter Saturation Voltage â VCE(sat)
= 0.2 Vdc (Max) @ IC = 1.2 Adc
= 0.55 Vdc (Max) @ IC = 5.0 Adc
⢠SOTâ223 Surface Mount Packaging
C 2,4
MMJT9410
Motorola Preferred Device
POWER BJT
IC = 3.0 AMPERES
BVCEO = 30 VOLTS
VCE(sat) = 0.2 VOLTS
CASE 318Eâ04, Style 1
C
B1 E3
Schematic
BCE
ÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃà MAXIMUM RATINGS (TC = 25°C unless otherwise noted)
ÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃ Rating
Symbol
ÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃ CollectorâEmitter Voltage
ÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃ CollectorâBase Voltage
ÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃ EmitterâBase Voltage
ÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃ BaseCurrent â Continuous
ÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃ Collector Current â Continuous
Collector Current â Peak
VCEO
VCB
VEB
IB
IC
ÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃ Total Power Dissipation @ TC = 25_C
PD
Derate above 25_C
ÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃ Total PD @ TA = 25_C mounted on 1â sq. (645 sq. mm) Drain pad on FRâ4 bd material
à ÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃà Total PD @ TA = 25_C mounted on 0.92â sq. (590 sq. mm) Drain pad on FRâ4 bd material
Total PD @ TA = 25_C mounted on 0.012â sq. (7.6 sq. mm) Drain pad on FRâ4 bd material
ÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃ Operating and Storage Junction Temperature Range
TJ, Tstg
ÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃ THERMAL CHARACTERISTICS
ÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃ Characteristic
Symbol
ÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃ Thermal Resistance â Junction to Case
â Junction to Ambient on 1â sq. (645 sq. mm) Drain pad on FRâ4 bd material
ÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃ â Junction to Ambient on 0.92â sq. (590 sq. mm) Drain pad on FRâ4 bd material
à ÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃà â Junction to Ambient on 0.012â sq. (7.6 sq. mm) Drain pad on FRâ4 bd material
RθJC
RθJA
RθJA
RθJA
ÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃ Maximum Lead Temperature for Soldering Purposes, 1/8â from case for 5 seconds
TL
ÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃ This document contains information on a new product. Specifications and information are subject to change without notice.
Top View
Pinout
Value
30
45
± 8.0
1.0
3.0
5.0
3.0
0.025
2.0
1.5
0.8
â 55 to + 150
Max
40
60
85
156
260
Unit
Vdc
Vdc
Vdc
Adc
Adc
Watts
mW/_C
Watts
_C
Unit
_C/W
_C
Preferred devices are Motorola recommended choices for future use and best overall value.
REV 1
©MMoototorroollaa, IBncip. 1o9la97r Power Transistor Device Data
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