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MMJT9410 Datasheet, PDF (1/4 Pages) Motorola, Inc – Bipolar Power Transistors
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
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by MMJT9410/D
Preliminary Data Sheet
Bipolar Power Transistors
NPN Silicon
• Collector –Emitter Sustaining Voltage — VCEO(sus)
= 30 Vdc (Min) @ IC = 10 mAdc
• High DC Current Gain — hFE
= 85 (Min) @ IC = 1.0 Adc
= 60 (Min) @ IC = 3.0 Adc
• Low Collector –Emitter Saturation Voltage — VCE(sat)
= 0.2 Vdc (Max) @ IC = 1.2 Adc
= 0.55 Vdc (Max) @ IC = 5.0 Adc
• SOT–223 Surface Mount Packaging
C 2,4
MMJT9410
Motorola Preferred Device
POWER BJT
IC = 3.0 AMPERES
BVCEO = 30 VOLTS
VCE(sat) = 0.2 VOLTS
CASE 318E–04, Style 1
C
B1 E3
Schematic
BCE
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ MAXIMUM RATINGS (TC = 25°C unless otherwise noted)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Rating
Symbol
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Collector–Emitter Voltage
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Collector–Base Voltage
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Emitter–Base Voltage
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ BaseCurrent — Continuous
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Collector Current — Continuous
Collector Current — Peak
VCEO
VCB
VEB
IB
IC
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Total Power Dissipation @ TC = 25_C
PD
Derate above 25_C
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Total PD @ TA = 25_C mounted on 1” sq. (645 sq. mm) Drain pad on FR–4 bd material
Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Total PD @ TA = 25_C mounted on 0.92” sq. (590 sq. mm) Drain pad on FR–4 bd material
Total PD @ TA = 25_C mounted on 0.012” sq. (7.6 sq. mm) Drain pad on FR–4 bd material
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Operating and Storage Junction Temperature Range
TJ, Tstg
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ THERMAL CHARACTERISTICS
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Characteristic
Symbol
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Thermal Resistance – Junction to Case
– Junction to Ambient on 1” sq. (645 sq. mm) Drain pad on FR–4 bd material
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ – Junction to Ambient on 0.92” sq. (590 sq. mm) Drain pad on FR–4 bd material
Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ – Junction to Ambient on 0.012” sq. (7.6 sq. mm) Drain pad on FR–4 bd material
RθJC
RθJA
RθJA
RθJA
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Maximum Lead Temperature for Soldering Purposes, 1/8” from case for 5 seconds
TL
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ This document contains information on a new product. Specifications and information are subject to change without notice.
Top View
Pinout
Value
30
45
± 8.0
1.0
3.0
5.0
3.0
0.025
2.0
1.5
0.8
– 55 to + 150
Max
40
60
85
156
260
Unit
Vdc
Vdc
Vdc
Adc
Adc
Watts
mW/_C
Watts
_C
Unit
_C/W
_C
Preferred devices are Motorola recommended choices for future use and best overall value.
REV 1
©MMoototorroollaa, IBncip. 1o9la97r Power Transistor Device Data
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