MMG05N60D Datasheet, PDF (1/6 Pages) Motorola, Inc – POWERLUX IGBT

MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
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™ Designer's Data Sheet
Insulated Gate Bipolar Transistor
N–Channel Enhancement–Mode Silicon Gate
This IGBT contains a built–in free wheeling diode and a gate
protection zener. Fast switching characteristics result in efficient
operation at higher frequencies.
• Built–In Free Wheeling Diode
• Built–In Gate Protection Zener Diode
• Industry Standard Package (SOT223)
m • High Speed Eoff: Typical 6.5 J @ IC = 0.3 A; TC = 125°C and
m dV/dt = 1000 V/ s
• Robust High Voltage Termination
• Robust Turn–Off SOA
C
MMG05N60D
POWERLUX
IGBT
0.5 A @ 25°C
600 V
4
1
2
3
G
E
1=G
2=4=C
3=E
CASE 318E–04
TO–261A
MAXIMUM RATINGS (TC = 25°C unless otherwise noted)
Parameters
Symbol
Value
Unit
Collector–Emitter Voltage
Collector–Gate Voltage (RGE = 1.0 MΩ)
Gate–Emitter Voltage — Continuous
Collector Current — Continuous @ TC = 25°C
— Continuous @ TC = 90°C
— Repetitive Pulsed Current (1)
Total Device Dissipation @ TC = 25°C
Operating and Storage Junction Temperature Range
Thermal Resistance — Junction to Case – IGBT
— Junction to Ambient
Maximum Lead Temperature for Soldering Purposes, 1/8″ from case for 5 seconds
VCES
VCGR
VCGR
IC25
IC90
ICM
PD
TJ, Tstg
R_θJC
R_θJA
TL
600
600
± 15
0.5
0.3
2.0
1.0
– 55 to 150
30
150
260
Vdc
Vdc
Vdc
Adc
Watt
°C
°C/W
UNCLAMPED DRAIN–TO–SOURCE AVALANCHE CHARACTERISTICS (TC ≤ 150°C)
Single Pulse Drain–to–Source Avalanche
Energy – Starting @ TC = 25°C
W ^{Energy – Starting @ TC = 125°C}
VCE = 100 V, VGE = 15 V, Peak IL = 2.0 A, L = 3.0 mH, RG = 25
EAS
mJ
125
40
(1) Pulse width is limited by maximum junction temperature repetitive rating.
Designer’s Data for “Worst Case” Conditions — The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit
curves — representing boundaries on device characteristics — are given to facilitate “worst case” design.
Designer’s is a trademark of Motorola, Inc.
© ^MMo^oto^toro^rl^oa,^laInc^P.^o19^w9^e7^{r Products Division Technical Data}
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