MMFT960T1 Datasheet, PDF (1/6 Pages) Motorola, Inc – MEDIUM POWER TMOS FET 300 mA 60 VOLTS

MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MMFT960T1/D
Medium Power Field Effect
Transistor
N–Channel Enhancement–Mode
Silicon Gate TMOS
SOT–223 for Surface Mount
This TMOS medium power field effect transistor is designed for
high speed, low loss power switching applications such as
switching regulators, dc–dc converters, solenoid and relay drivers.
The device is housed in the SOT–223 package which is designed
for medium power surface mount applications.
• Silicon Gate for Fast Switching Speeds
• RDS(on) = 1.7 Ohm Max
• Low Drive Requirement
• The SOT–223 Package can be soldered using wave or reflow.
The formed leads absorb thermal stress during soldering
eliminating the possibility of damage to the die.
• Available in 12 mm Tape and Reel
1
Use MMFT960T1 to order the 7 inch/1000 unit reel
GATE
Use MMFT960T3 to order the 13 inch/4000 unit reel
®
2,4 DRAIN
3 SOURCE
MMFT960T1
Motorola Preferred Device
MEDIUM POWER
TMOS FET
300 mA
60 VOLTS
RDS(on) = 1.7 OHM MAX
4
1
2
3
CASE 318E–04, STYLE 3
TO–261AA
MAXIMUM RATINGS (TC = 25°C unless otherwise noted)
Rating
Symbol
Drain–to–Source Voltage
Gate–to–Source Voltage — Non–Repetitive
Drain Current
Total Power Dissipation @ TA = 25°C(1)
Derate above 25°C
VDS
VGS
ID
PD
Operating and Storage Temperature Range
DEVICE MARKING
TJ, Tstg
FT960
THERMAL CHARACTERISTICS
Thermal Resistance — Junction–to–Ambient
Maximum Temperature for Soldering Purposes
Time in Solder Bath
R_θJA
TL
1. Device mounted on a FR–4 glass epoxy printed circuit board using minimum recommended footprint.
Value
60
± 30
300
0.8
6.4
– 65 to 150
156
260
10
Unit
Volts
Volts
mAdc
Watts
mW/°C
°C
°C/W
°C
Sec
TMOS is a registered trademark of Motorola, Inc.
Thermal Clad is a trademark of the Bergquist Company
Preferred devices are Motorola recommended choices for future use and best overall value.
REV 3
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