MMFT6N03HD Datasheet, PDF (1/4 Pages) Motorola, Inc – TMOS POWER 6.0 AMPERES 30 VOLTS

MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
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HDTMOS™ Single N-Channel
Field Effect Transistor
MMFT6N03HD
Medium Power Surface Mount Products
These medium power SOT–223 devices are an advanced series
of power MOSFETs which utilize Motorola’s High Cell Density
HDTMOS process. These surface mount MOSFETs feature low
RDS(on) and true logic level performance. They are capable of
withstanding high energy in the avalanche and commutation
modes and the drain–to–source diode has a very low reverse
recovery time. SOT–223 HDTMOS devices are designed for use in
low voltage, high speed switching applications where power
efficiency is important. Typical applications are dc–dc converters,
and power management in peripheral products such as printers
and cordless phones. They can also be used for low voltage motor ^G
controls in mass storage products such as disk drives and tape
drives. The avalanche energy is specified to eliminate the
guesswork in designs where inductive loads are switched and offer
additional safety margin against unexpected voltage transients.
• Low RDS(on) Provides Higher Efficiency and Extends Battery Life
• Logic Level Gate Drive — Can Be Driven by Logic ICs
• SOT–223 Saves Board Space and Height
• Diode Is Characterized for Use In Bridge Circuits
• IDSS Specified at Elevated Temperature
• Avalanche Energy Specified
• Mounting Information for SOT–223 Package Provided
• Use MMFT5N02HDT1 to order the 7 inch/1000 unit reel
Use MMFT5N02HDT3 to order the 13 inch/4000 unit reel
™
D
S
TMOS POWER FET
6.0 AMPERES
30 VOLTS
RDS(on) = 0.050 OHM
4
1
2
3
CASE 318E–04, Style 3
TO–261AA
MAXIMUM RATINGS (TC = 25°C unless otherwise noted)
Rating
Symbol
Value
Unit
Drain–to–Source Voltage
VDSS
Drain–to–Gate Voltage (RGS = 1.0 MΩ)
VDGR
Gate–to–Source Voltage – Continuous
Drain Current – Continuous(1)
Drain Current – Continuous @ 100°C(1)
Drain Current – Single Pulse (tp ≤ 10 µs)(1)
Total PD @ TA = 25°C(1)
Total PD @ TA = 25°C(2)
VGS
ID
ID
IDM
PD
Operating and Storage Temperature Range
TJ, Tstg
Single Pulse Drain–to–Source Avalanche Energy – Starting TJ = 25°C
(VDD = 25 Vdc, VGS = 10 Vdc, Peak IL = 6.0 Apk, L = 72 mH)
EAS
Thermal Resistance
– Junction to Ambient(1)
– Junction to Ambient(2)
R_θJA
R_θJA
Maximum Lead Temperature for Soldering Purposes, 1/8″ from case for 10 seconds
TL
(1) When mounted on 1” sq. Drain pad on FR–4 bd material
(2) When mounted on minimum recommended Drain pad on FR–4 bd material
This document contains information on a new product. Specifications and information herein are subject to change without notice.
HDTMOS is a trademark of Motorola, Inc. TMOS is a registered trademark of Motorola, Inc.
30
30
± 20
6.0
3.7
40
1.8
0.8
– 55 to 150
1300
70
156
260
Vdc
Vdc
Vdc
Adc
Apk
Watts
°C
mJ
°C/W
°C
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