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MMFT5P03HDT3 Datasheet, PDF (1/12 Pages) Motorola, Inc – TMOS P-CHANNEL FIELD FEECT TRANSISTOR | |||
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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MMFT5P03HD/D
⢠Designer's Data Sheet
Medium Power Surface Mount Products
TMOS P-Channel
MMFT5P03HD
Motorola Preferred Device
Field Effect Transistor
MMFT5P03HD is an advanced power MOSFET which utilizes
Motorolaâs High Cell Density HDTMOS process. This miniature
surface mount MOSFET features ultra low RDS(on) and true logic
level performance. It is capable of withstanding high energy in the
â¢
avalanche and commutation modes and the drainâtoâsource diode
has a very low reverse recovery time. MMFT5P03HD devices are
designed for use in low voltage, high speed switching applications
where power efficiency is important. Typical applications are dcâdc
2, 4
D
converters, and power management in portable and battery
powered products such as computers, printers, cellular and
cordless phones. They can also be used for low voltage motor
controls in mass storage products such as disk drives and tape
G
drives. The avalanche energy is specified to eliminate the
1
guesswork in designs where inductive loads are switched and offer
additional safety margin against unexpected voltage transients.
S
⢠Ultra Low RDS(on) Provides Higher Efficiency and Extends
3
Battery Life
⢠Logic Level Gate Drive â Can Be Driven by Logic ICs
⢠Miniature SOTâ223 Surface Mount Package â Saves Board
Space
⢠Diode Is Characterized for Use In Bridge Circuits
⢠Diode Exhibits High Speed, With Soft Recovery
⢠IDSS Specified at Elevated Temperature
⢠Avalanche Energy Specified
TMOS MEDIUM
POWER FET
5.2 AMPERES
30 VOLTS
RDS(on) = 100 mâ¦
4
1
23
CASE 318Eâ04, Style 3
TOâ261AA
DEVICE MARKING
ORDERING INFORMATION
5P03H
Device
MMFT5P03HDT3
Reel Size
13â³
Tape Width
12 mm embossed tape
Quantity
4000 units
Designerâs Data for âWorst Caseâ Conditions â The Designerâs Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit
curves â representing boundaries on device characteristics â are given to facilitate âworst caseâ design.
Preferred devices are Motorola recommended choices for future use and best overall value.
HDTMOS is a trademark of Motorola, Inc. TMOS is a registered trademark of Motorola, Inc. Micro8 is a registered trademark of International
Rectifier. Thermal Clad is a trademark of the Bergquist Company.
REV 2
©MMoottoororolal,aInTc.M19O9S7 Power MOSFET Transistor Device Data
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