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MMFT3055V Datasheet, PDF (1/4 Pages) Motorola, Inc – TMOS POWER FET 1.7 AMPERES 60 VOLTS | |||
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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
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TMOS Vâ¢
SOT-223 for Surface Mount
MMFT3055V
NâChannel EnhancementâMode Silicon Gate
TMOS V is a new technology designed to achieve an onâresis-
tance area product about oneâhalf that of standard MOSFETs. This
new technology more than doubles the present cell density of our
50 and 60 volt TMOS devices. Just as with our TMOS EâFET
designs, TMOS V is designed to withstand high energy in the
avalanche and commutation modes. Designed for low voltage, high
speed switching applications in power supplies, converters and
power motor controls, these devices are particularly well suited for
bridge circuits where diode speed and commutating safe operating
areas are critical and offer additional safety margin against
unexpected voltage transients.
G
New Features of TMOS V
⢠Onâresistance Area Product about Oneâhalf that of Standard
MOSFETs with New Low Voltage, Low RDS(on) Technology
⢠Faster Switching than EâFET Predecessors
TM
D
S
TMOS POWER FET
1.7 AMPERES
60 VOLTS
RDS(on) = 0.130 OHM
4
1
2
3
CASE 318Eâ04, Style 3
TOâ261AA
Features Common to TMOS V and TMOS EâFETS
⢠Avalanche Energy Specified
⢠IDSS and VDS(on) Specified at Elevated Temperature
⢠Static Parameters are the Same for both TMOS V and TMOS EâFET
⢠Available in 12 mm Tape & Reel
Use MMFT3055VT1 to order the 7 inch/1000 unit reel
Use MMFT3055VT3 to order the 13 inch/4000 unit reel
MAXIMUM RATINGS (TC = 25°C unless otherwise noted)
Rating
Symbol
Value
Unit
DrainâtoâSource Voltage
DrainâtoâGate Voltage (RGS = 1.0 Mâ¦)
GateâtoâSource Voltage â Continuous
GateâtoâSource Voltage â Nonârepetitive (tp ⤠10 ms)
Drain Current â Continuous
Drain Current â Continuous @ 100°C
Drain Current â Single Pulse (tp ⤠10 µs)
Total PD @ TA = 25°C mounted on 1â sq. Drain pad on FRâ4 bd material
Total PD @ TA = 25°C mounted on 0.70â sq. Drain pad on FRâ4 bd material
Total PD @ TA = 25°C mounted on min. Drain pad on FRâ4 bd material
Derate above 25°C
VDSS
VDGR
VGS
VGSM
ID
ID
IDM
PD
60
60
± 20
± 25
1.7
1.4
6.0
2.0
1.7
0.9
6.3
Vdc
Vdc
Vdc
Vpk
Adc
Apk
Watts
mW/°C
Operating and Storage Temperature Range
TJ, Tstg
Single Pulse DrainâtoâSource Avalanche Energy â Starting TJ = 25°C
(VDD = 25 Vdc, VGS = 10 Vdc, Peak IL = 3.4 Apk, L = 10 mH, RG = 25 ⦠)
EAS
Thermal Resistance
â Junction to Ambient on 1â sq. Drain pad on FRâ4 bd material
â Junction to Ambient on 0.70â sq. Drain pad on FRâ4 bd material
â Junction to Ambient on min. Drain pad on FRâ4 bd material
RθJA
RθJA
RθJA
Maximum Lead Temperature for Soldering Purposes, 1/8â³ from case for 10 seconds
TL
This document contains information on a new product. Specifications and information herein are subject to change without notice.
EâFET and TMOS V are trademarks of Motorola, Inc. TMOS is a registered trademark of Motorola, Inc.
â 55 to 175
58
70
88
159
260
°C
mJ
°C/W
°C
© MMoototororloa,laIncT.M19O96S Power MOSFET Transistor Device Data
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