MMFT2N25E Datasheet, PDF (1/6 Pages) Motorola, Inc – TMOS POWER FET 2.0 AMPERES 250 VOLTS

MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
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TMOS E-FET™
High Energy Power FET
N–Channel Enhancement–Mode Silicon Gate
This advanced high voltage TMOS E–FET is designed to
withstand high energy in the avalanche mode and switch efficiently.
This new high energy device also offers a drain–to–source diode
with fast recovery time. Designed for high voltage, high speed
switching applications such as power supplies, PWM motor
controls and other inductive loads, the avalanche energy capability
is specified to eliminate the guesswork in designs where inductive
loads are switched and offer additional safety margin against
unexpected voltage transients.
• Avalanche Energy Capability Specified at Elevated
Temperature
• Internal Source–to–Drain Diode Designed to Replace External
1
Zener Transient Suppressor – Absorbs High Energy in the
G
Avalanche Mode
• Source–to–Drain Diode Recovery Time Comparable to
Discrete Fast Recovery Diode
®
2,4
D
S
3
MMFT2N25E
TMOS POWER FET
2.0 AMPERES
250 VOLTS
RDS(on) = 3.5 W
4
1
2
3
CASE 318E–04, STYLE 3
TO–261AA
MAXIMUM RATINGS (TC = 25°C unless otherwise noted)
Rating
Symbol
Value
Unit
Drain–to–Source Voltage
W Drain–to–Gate Voltage, RGS = 1.0 m
Gate–to–Source Voltage — Continuous
m Gate–to–Source Voltage — Single Pulse (tp ≤ 50 S)
Drain Current — Continuous @ TC = 25°C
m ^{Drain Current — Continuous @ TC = 100°C}
Drain Current — Single Pulse (tp ≤ 10 S)
Total Power Dissipation @ TC = 25°C
Derate above 25°C
Total PD @ TA = 25°C mounted on 1″ Sq. Drain Pad on FR–4 Bd. Material
Total PD @ TA = 25°C mounted on 0.7″ Sq. Drain Pad on FR–4 Bd. Material
Total PD @ TA = 25°C mounted on min. Drain Pad on FR–4 Bd. Material
VDSS
250
Vdc
VDGR
250
Vdc
VGS
± 20
Vdc
VGSM
± 40
Vdc
ID
2.0
Adc
ID
0.6
IDM
7.0
Apk
PD
0.77
Watts
6.2
mW/°C
1.0
Watts
1.2
0.8
Operating and Storage Temperature Range
TJ, Tstg
– 55 to 150
°C
UNCLAMPED DRAIN–TO–SOURCE AVALANCHE CHARACTERISTICS (TJ < 150°C)
Single Pulse Drain–to–Source Avalanche Energy — Starting TJ = 25°C
(VDD = 80 V, VGS = 10 V, Peak IL= 4.0 Apk, L = 3.0 mH, RG = 25 Ω)
EAS
mJ
26
THERMAL CHARACTERISTICS
— Junction–to–Ambient on 1″ Sq. Drain Pad on FR–4 Bd. Material
— Junction–to–Ambient on 0.7″ Sq. Drain Pad on FR–4 Bd. Material
— Junction–to–Ambient on min. Drain Pad on FR–4 Bd. Material
R_θJA
90
°C/W
103
162
Maximum Lead Temperature for Soldering Purposes, 1/8″ from case for 10 seconds
TL
260
°C
This document contains information on a product under development. Motorola reserves the right to change or discontinue this product without notice.
TMOS is a registered trademark of Motorola, Inc.
E–FET is a trademark of Motorola, Inc.
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