MMFT2955E Datasheet, PDF (1/10 Pages) Motorola, Inc – TMOS MEDIUM POWER FET 1.2 AMP 60 VOLTS

MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MMFT2955E/D
Medium Power Field Effect Transistor
t ^{P–Channel Enhancement Mode}
Silicon Gate TMOS E–FET
SOT–223 for Surface Mount
MMFT2955E
Motorola Preferred Device
This advanced E–FET is a TMOS medium power MOSFET
designed to withstand high energy in the avalanche and commuta-
tion modes. This new energy efficient device also offers a
drain–to–source diode with a fast recovery time. Designed for low
voltage, high speed switching applications in power supplies,
converters and PWM motor controls, these devices are particularly
well suited for bridge circuits where diode speed and commutating
safe operating areas are critical and offer additional safety margin
against unexpected voltage transients. The device is housed in the
SOT–223 package which is designed for medium power surface
mount applications.
• Silicon Gate for Fast Switching Speeds
• Low RDS(on) — 0.3 Ω max
G
• The SOT–223 Package can be Soldered Using Wave or Re-
flow. The Formed Leads Absorb Thermal Stress During Sol-
dering, Eliminating the Possibility of Damage to the Die
• Available in 12 mm Tape and Reel
Use MMFT2955ET1 to order the 7 inch/1000 unit reel.
Use MMFT2955ET3 to order the 13 inch/4000 unit reel.
TMOS MEDIUM POWER FET
1.2 AMP
60 VOLTS
RDS(on) = 0.3 OHM
®
D
S
4
1
2
3
CASE 318E–04, STYLE 3
TO–261AA
MAXIMUM RATINGS (TA = 25°C unless otherwise noted)
Rating
Symbol
Drain–to–Source Voltage
Gate–to–Source Voltage — Continuous
Drain Current — Continuous
Drain Current — Pulsed
Total Power Dissipation @ TA = 25°C
Derate above 25°C
VDS
VGS
ID
IDM
PD(1)
Operating and Storage Temperature Range
Single Pulse Drain–to–Source Avalanche Energy — Starting TJ = 25°C
(VDD = 25 V, VGS = 10 V, Peak IL= 1.2 A, L = 0.2 mH, RG = 25 Ω)
TJ, Tstg
EAS
DEVICE MARKING
2955
THERMAL CHARACTERISTICS
Thermal Resistance — Junction–to–Ambient (surface mounted)
Maximum Temperature for Soldering Purposes,
Time in Solder Bath
R_θJA
TL
(1) Power rating when mounted on FR–4 glass epoxy printed circuit board using recommended footprint.
Value
60
±15
1.2
4.8
0.8
6.4
– 65 to 150
108
156
260
10
TMOS is a registered trademark of Motorola, Inc.
E–FET is a trademark of Motorola, Inc.
Thermal Clad is a trademark of the Bergquist Company
Unit
Vdc
Adc
Watts
mW/°C
°C
mJ
°C/W
°C
Sec
Preferred devices are Motorola recommended choices for future use and best overall value.
REV 4
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