MMFT2406T1 Datasheet, PDF (1/6 Pages) Motorola, Inc – MEDIUM POWER TMOS FET 700 mA 240 VOLTS

MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MMFT2406T1/D
Medium Power Field Effect
Transistor
N–Channel Enhancement Mode
Silicon Gate TMOS E–FET™
SOT–223 for Surface Mount
This TMOS medium power field effect transistor is designed for
high speed, low loss power switching applications such as
switching regulators, converters, solenoid and relay drivers. The
device is housed in the SOT–223 package which is designed for
medium power surface mount applications.
• Silicon Gate for Fast Switching Speeds
• High Voltage — 240 Vdc
• Low Drive Requirement
• The SOT–223 Package can be soldered using wave or reflow.
The formed leads absorb thermal stress during soldering,
eliminating the possibility of damage to the die.
• Available in 12 mm Tape and Reel
G
Use MMFT2406T1 to order the 7 inch/1000 unit reel.
Use MMFT2406T3 to order the 13 inch/4000 unit reel.
MMFT2406T1
Motorola Preferred Device
MEDIUM POWER
TMOS FET
700 mA
240 VOLTS
RDS(on) = 6.0 OHM
®
D
S
4
1
2
3
CASE 318E–04, STYLE 3
TO–261AA
MAXIMUM RATINGS (TC = 25°C unless otherwise noted)
Rating
Symbol
Value
Unit
Drain–to–Source Voltage
Gate–to–Source Voltage — Continuous
Drain Current
Total Power Dissipation @ TA = 25°C(1)
Derate above 25°C
VDS
VGS
ID
PD
240
Vdc
± 20
Vdc
700
mAdc
1.5
Watts
12
mW/°C
Operating and Storage Temperature Range
DEVICE MARKING
TJ, Tstg
– 65 to 150
°C
T2406
THERMAL CHARACTERISTICS
Thermal Resistance — Junction–to–Ambient (surface mounted)(1)
Lead Temperature for Soldering Purposes, 1/16″ from case
Time in Solder Bath
R_θJA
83.3
°C/W
TL
260
°C
10
Sec
1. Device mounted on a glass epoxy printed circuit board 1.575 in. x 1.575 in. x 0.059 in.; mounting pad for the collector lead min. 0.93 sq. in.
Thermal Clad is a trademark of the Bergquist Company
TMOS is a registered trademark of Motorola, Inc.
E–FET is a trademark of Motorola, Inc.
Preferred devices are Motorola recommended choices for future use and best overall value.
REV 1
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