MMFT108T1 Datasheet, PDF (1/6 Pages) Motorola, Inc – TMOS FET TRANSISTOR N-CHANNEL - ENHANCEMENT

MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Field Effect Transistor
N–Channel Enhancement–Mode
Logic Level SOT–223
Order this document
by MMFT108T1/D
®
2, 4 DRAIN
1
GATE
3 SOURCE
MMFT108T1
TMOS FET
TRANSISTOR
N–CHANNEL —
ENHANCEMENT
4
1
2
3
CASE 318E–04, STYLE 3
SOT–223 (TO–261AA)
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Drain – to–Source Voltage
Gate–to–Source Voltage — Continuous
Drain Current — Continuous
Total Power Dissipation
@ TA = 25°C
Derate above 25°C
VDSS
VGS
ID
PD
200
Volts
±20
Volts
250
mAdc
0.8
Watts
6.4
mW/°C
Operating and Storage Temperature Range
DEVICE MARKING
TJ, Tstg – 65 to +150
°C
MT108
THERMAL CHARACTERISTICS
Thermal Resistance — Junction–to–Ambient ⁽¹⁾
Maximum Temperature for Soldering Purposes
Maximum Time in Solder Bath
R_θJA
156
°C/W
TL
260
°C
10
Sec
1. Device mounted on FR4 glass epoxy printed circuit using minimum recommended foot print.
TMOS is a registered trademark of Motorola, Inc.
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