MMDF7N02Z Datasheet, PDF (1/10 Pages) Motorola, Inc – DUAL TMOS POWER MOSFET 7.0 AMPERES 20 VOLTS

MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
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by MMDF7N02Z/D
Advance Information
Medium Power Surface Mount Products
TMOS Dual N-Channel with
MMDF7N02Z
Motorola Preferred Device
Monolithic Zener ESD Protected Gate
EZFETs™ are an advanced series of power MOSFETs which
utilize Motorola’s High Cell Density TMOS process and contain
monolithic back–to–back zener diodes. These zener diodes
provide protection against ESD and unexpected transients. These
miniature surface mount MOSFETs feature ultra low RDS(on) and
true logic level performance. They are capable of withstanding high
energy in the avalanche and commutation modes and the
drain–to–source diode has a very low reverse recovery time.
EZFET devices are designed for use in low voltage, high speed
switching applications where power efficiency is important. Typical
applications are dc–dc converters, and power management in
portable and battery powered products such as computers,
printers, cellular and cordless phones. They can also be used for _G
low voltage motor controls in mass storage products such as disk
drives and tape drives.
™
D
• Zener Protected Gates Provide Electrostatic Discharge Protection
• Designed to Withstand 200 V Machine Model and 2000 V Human Body Model
S
• Ultra Low RDS(on) Provides Higher Efficiency and Extends Battery Life
• Logic Level Gate Drive — Can Be Driven by Logic ICs
• Miniature SO–8 Surface Mount Package — Saves Board Space
• Diode Is Characterized for Use In Bridge Circuits
• Diode Exhibits High Speed, With Soft Recovery
• IDSS Specified at Elevated Temperature
• Mounting Information for SO–8 Package Provided
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Parameter
DUAL TMOS
POWER MOSFET
7.0 AMPERES
20 VOLTS
RDS(on) = 27 mW
CASE 751–05, Style 11
SO–8
Source–1
Gate–1
Source–2
Gate–2
18
27
36
45
Top View
Drain–1
Drain–1
Drain–2
Drain–2
Symbol
Max
Unit
Drain–to–Source Voltage
Drain–to–Gate Voltage (RGS = 1.0 MΩ)
Gate–to–Source Voltage — Continuous
Drain Current — Continuous @ TA = 25°C ⁽¹⁾
Drain Current — Continuous @ TA = 70°C ⁽¹⁾
Drain Current — Pulsed Drain Current ⁽³⁾
Total Power Dissipation @ TA = 25°C ⁽¹⁾
Linear Derating Factor @ TA = 25°C ⁽¹⁾
Total Power Dissipation @ TA = 25°C ⁽²⁾
Linear Derating Factor @ TA = 25°C ⁽²⁾
Operating and Storage Temperature Range
THERMAL RESISTANCE
VDSS
VDGR
VGS
ID
ID
IDM
PD
PD
TJ, Tstg
20
20
± 12
7.0
4.6
35
2.0
16
1.39
11.11
– 55 to 150
Vdc
Vdc
Vdc
Adc
Watts
mW/°C
Watts
mW/°C
°C
Junction–to–Ambient ⁽¹⁾
Junction–to–Ambient ⁽²⁾
Parameter
Symbol
Typ
R_qJA
—
—
(1) When mounted on 1” square FR4 or G–10 board (VGS = 10 V, @ 10 seconds).
(2) When mounted on minimum recommended FR4 or G–10 board (VGS = 10 V, @ Steady State).
(3) Repetitive rating; pulse width limited by maximum junction temperature.
DEVICE MARKING
ORDERING INFORMATION
Max
Unit
62.5
°C/W
90
D7N02Z
Device
MMDF7N02ZR2
Reel Size
13″
Tape Width
12 mm embossed tape
This document contains information on a new product. Specifications and information herein are subject to change without notice.
HDTMOS is a trademark of Motorola, Inc. TMOS is a registered trademark of Motorola, Inc.
Thermal Clad is a trademark of the Bergquist Company.
Quantity
2500 units
Preferred devices are Motorola recommended choices for future use and best overall value.
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