MMDF3P03HD Datasheet, PDF (1/10 Pages) Motorola, Inc – DUAL TMOS POWER MOSFET 30 VOLTS

MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MMDF3P03HD/D
™ Designer's Data Sheet
Medium Power Surface Mount Products
TMOS Dual P-Channel
Field Effect Transistors
Dual HDTMOS devices are an advanced series of power
MOSFETs which utilize Motorola’s High Cell Density TMOS
process. Dual HDTMOS devices are designed for use in low
voltage, high speed switching applications where power efficiency
is important. Typical applications are dc–dc converters, and power
management in portable and battery powered products such as
computers, printers, cellular and cordless phones. They can also
be used for low voltage motor controls in mass storage products
such as disk drives and tape drives.
• Low RDS(on) Provides Higher Efficiency and Extends Battery Life
• Logic Level Gate Drive — Can Be Driven by Logic ICs
• Miniature SO–8 Surface Mount Package — Saves Board Space
• Diode Is Characterized for Use In Bridge Circuits
G
• Diode Exhibits High Speed, With Soft Recovery
• IDSS Specified at Elevated Temperature
• Mounting Information for SO–8 Package Provided
MMDF3P03HD
Motorola Preferred Device
DUAL TMOS
POWER MOSFET
30 VOLTS
RDS(on) = 100 mW
™
D
S
CASE 751–05, Style 11
SO–8
Source–1
Gate–1
Source–2
Gate–2
18
27
36
45
Top View
Drain–1
Drain–1
Drain–2
Drain–2
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating
Drain–to–Source Voltage
Gate–to–Source Voltage — Continuous
Drain Current — Continuous @ TA = 25°C
Drain Current — Single Pulse (tp ≤ 10 µs)
Source Current — Continuous @ TA = 25°C
Total Power Dissipation @ TA = 25°C ⁽¹⁾
Operating and Storage Temperature Range
W Single Pulse Drain–to–Source Avalanche Energy — Starting TJ = 25°C
(VDD = 30 Vdc, VGS = 5.0 Vdc, VDS = 20 Vdc, IL = 9.0 Apk, L = 10 mH, RG = 25 )
Thermal Resistance — Junction–to–Ambient
Maximum Lead Temperature for Soldering Purposes, 1/8″ from Case for 10 sec.
DEVICE MARKING
D3P03
(1) Mounted on G10/FR4 glass epoxy board using minimum recommended footprint.
ORDERING INFORMATION
Device
Reel Size
Tape Width
Quantity
MMDF3P03HDR2
13″
12 mm embossed tape
2500
Symbol
VDSS
VGS
ID
IDM
IS
PD
TJ, Tstg
EAS
Value
30
± 20
3.0
15
2.5
2.0
– 55 to 150
450
Unit
Vdc
Vdc
Adc
Apk
Adc
Watts
°C
mJ
R_θJA
TL
62.5
°C/W
260
°C
Designer’s Data for “Worst Case” Conditions — The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit
curves — representing boundaries on device characteristics — are given to facilitate “worst case” design.
Designer’s and HDTMOS are trademarks of Motorola, Inc. TMOS is a registered trademark of Motorola, Inc.
Thermal Clad is a trademark of the Bergquist Company.
Preferred devices are Motorola recommended choices for future use and best overall value.
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