MMDF3C03HD Datasheet, PDF (1/12 Pages) Motorola, Inc – COMPLEMENTARY DUAL TMOS POWER FET 30 VOLTS

MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MMDF3C03HD/D
™ Designer's Data Sheet
Medium Power Surface Mount Products
Complementary TMOS
Field Effect Transistors
MiniMOS devices are an advanced series of power MOSFETs
which utilize Motorola’s High Cell Density HDTMOS process.
These miniature surface mount MOSFETs feature ultra low RDS(on)
and true logic level performance. They are capable of withstanding
high energy in the avalanche and commutation modes and the
drain–to–source diode has a very low reverse recovery time.
MiniMOS devices are designed for use in low voltage, high speed
switching applications where power efficiency is important. Typical
applications are dc–dc converters, and power management in
portable and battery powered products such as computers,
printers, cellular and cordless phones. They can also be used for _P–G
low voltage motor controls in mass storage products such as disk
drives and tape drives.
• Ultra Low RDS(on) Provides Higher Efficiency and
Extends Battery Life
• Logic Level Gate Drive — Can Be Driven by Logic ICs
• Miniature SO–8 Surface Mount Package —
Saves Board Space
• Ideal for Synchronous Rectification
• Diode Exhibits High Speed, With Soft Recovery
N–G
• IDSS Specified at Elevated Temperature
• Mounting Information for SO–8 Package Provided
MMDF3C03HD
Motorola Preferred Device
COMPLEMENTARY
DUAL TMOS POWER FET
30 VOLTS
N–CH
P–CH
RDS(on)
RDS(on)
=
=
0.050
0.100
W
W
™
P–S
CASE 751–05, Style 11
SO–8
D
N–Source
18
Drain
N–Gate
27
Drain
P–Source
36
Drain
P–Gate
45
Drain
Top View
N–S
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating
Symbol Polarity
Value
Unit
Drain–to–Source Voltage
Gate–to–Source Voltage
Drain Current — Continuous
VDSS
—
30
Vdc
VGS
—
± 20
Vdc
ID
N–Channel
5.0
Adc
P–Channel
3.0
Drain Current — Pulsed
Operating and Storage Temperature Range
Total Power Dissipation @ TA = 25°C ⁽¹⁾
W Single Pulse Drain–to–Source Avalanche Energy — Starting TJ = 25°C
(VDD = 30 Vdc, VGS = 5.0 Vdc, IL = 9.0 Apk, L = 10 mH, RG = 25 )
W (VDD = 30 Vdc, VGS = 5.0 Vdc, IL = 9.0 Apk, L = 10 mH, RG = 25 )
Thermal Resistance — Junction–to–Ambient ⁽¹⁾
Maximum Lead Temperature for Soldering Purposes, 1/8″ from Case for 10 sec.
DEVICE MARKING
IDM
TJ, Tstg
PD
EAS
R_θJA
TL
N–Channel
P–Channel
—
25
15
–55 to +150
2.0
N–Channel
325
P–Channel
450
62.5
260
Apk
°C
Watts
mJ
°C/W
°C
D3C03HD
(1) Mounted on G10/FR4 glass epoxy board using minimum recommended footprint.
ORDERING INFORMATION
Device
MMDF3C03HDR2
Reel Size
13″
Tape Width
12 mm embossed tape
Quantity
2500
Designer’s Data for “Worst Case” Conditions — The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit
curves — representing boundaries on device characteristics — are given to facilitate “worst case” design.
Designer’s, HDTMOS and MiniMOS are trademarks of Motorola, Inc. TMOS is a registered trademark of Motorola, Inc.
Thermal Clad is a trademark of the Bergquist Company.
Preferred devices are Motorola recommended choices for future use and best overall value.
REV 1
©^MM^oot^to^oro^rola^l,^aIn^Tc.^M19^O9^S7 ^{Power MOSFET Transistor Device Data}
1