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MMDF2N06V Datasheet, PDF (1/4 Pages) Motorola, Inc – DUAL TMOS MOSFET 3.3 AMPERES 60 VOLTS | |||
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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
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by MMDF2N06V/D
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TMOS Vâ¢
SO-8 for Surface Mount
NâChannel EnhancementâMode Silicon Gate
TMOS V is a new technology designed to achieve an onâresis-
tance area product about oneâhalf that of standard MOSFETs. This
new technology more than doubles the present cell density of our
50 and 60 volt TMOS devices. Just as with our TMOS EâFET
designs, TMOS V is designed to withstand high energy in the
avalanche and commutation modes. Designed for low voltage, high
speed switching applications in power supplies, converters and
power motor controls, these devices are particularly well suited for
bridge circuits where diode speed and commutating safe operating
areas are critical and offer additional safety margin against
unexpected voltage transients.
G
New Features of TMOS V
⢠Onâresistance Area Product about Oneâhalf that of Standard
MOSFETs with New Low Voltage, Low RDS(on) Technology
⢠Faster Switching than EâFET Predecessors
Features Common to TMOS V and TMOS EâFETS
⢠Avalanche Energy Specified
⢠IDSS and VDS(on) Specified at Elevated Temperature
⢠Static Parameters are the Same for both TMOS V and TMOS EâFET
⢠Miniature SOâ8 Surface Mount Package â Saves Board Space
⢠Mounting Information for SOâ8 Package Provided
TM
D
S
MMDF2N06V
DUAL TMOS MOSFET
3.3 AMPERES
60 VOLTS
RDS(on) = 0.115 OHM
CASE 751â05, Style 11
SOâ8
Sourceâ1
Gateâ1
Sourceâ2
Gateâ2
18
27
36
45
Top View
Drainâ1
Drainâ1
Drainâ2
Drainâ2
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating
Symbol
DrainâtoâSource Voltage
DrainâtoâGate Voltage, (RGS = 1 Mâ¦)
GateâtoâSource Voltage â Continuous
Drain Current â Continuous @ TA = 25°C
Drain Current â Continuous @ TA = 100°C
Drain Current â Single Pulse (tp ⤠10 µs)
Total Power Dissipation @ TA = 25°C (1)
Operating and Storage Temperature Range
Single Pulse DrainâtoâSource Avalanche Energy â Starting TJ = 25°C
(VDD = 25 Vdc, VGS = 10 Vdc, Peak IL = 3.3 Apk, L = 10 mH, RG = 25 â¦)
Thermal Resistance, Junction to Ambient (1)
Maximum Lead Temperature for Soldering Purposes, 0.0625â³ from case for 10 seconds
VDSS
VDGR
VGS
ID
ID
IDM
PD
TJ, Tstg
EAS
RθJA
TL
DEVICE MARKING
2N06V
(1) Mounted on G10/FR4 glass epoxy board using minimum recommended footprint.
ORDERING INFORMATION
Device
Reel Size
Tape Width
Quantity
MMDF2N06V1
7â³
12mm embossed tape
500
MMDF2N06V2
13â³
12mm embossed tape
2500
This document contains information on a new product. Specifications and information herein are subject to change without notice.
EâFET and TMOS V are trademarks of Motorola, Inc. TMOS is a registered trademark of Motorola, Inc.
Value
60
60
± 20
3.3
0.5
9.9
2.0
â 55 to 175
54
62.5
260
Unit
Vdc
Vdc
Vdc
Adc
Apk
W
°C
mJ
°C/W
°C
©MMoottoororolal,aInTc.M19O9S6 Power MOSFET Transistor Device Data
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