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MMBTH81LT1 Datasheet, PDF (1/4 Pages) Motorola, Inc – UHF/VHF Transistor | |||
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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MMBTH81LT1/D
UHF/VHF Transistor
PNP Silicon
COLLECTOR
3
1
BASE
MMBTH81LT1
Motorola Preferred Device
MAXIMUM RATINGS
2
EMITTER
Rating
Symbol
Value
Unit
CollectorâEmitter Voltage
CollectorâBase Voltage
EmitterâBase Voltage
DEVICE MARKING
VCEO
â20
Vdc
VCBO
â20
Vdc
VEBO
â3.0
Vdc
MMBTH81LT1 = 3D
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR-5 Board,(1)
TA = 25°C
Derate above 25°C
Symbol
PD
Thermal Resistance, Junction to Ambient
Total Device Dissipation
Alumina Substrate,(2) TA = 25°C
Derate above 25°C
RθJA
PD
Thermal Resistance, Junction to Ambient
RθJA
Junction and Storage Temperature
TJ, Tstg
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
OFF CHARACTERISTICS
CollectorâEmitter Breakdown Voltage (IC = â1.0 mAdc, IB = 0)
CollectorâBase Breakdown Voltage (IC = â10 µAdc, IE = 0)
EmitterâBase Breakdown Voltage (IE = â10 µAdc, IC = 0)
Collector Cutoff Current (VCB = â10 Vdc, IE = 0)
Emitter Cutoff Current (VEB = â2.0 Vdc, IC = 0)
ON CHARACTERISTICS
V(BR)CEO
â20
V(BR)CBO
â20
V(BR)EBO
â3.0
ICBO
â
IEBO
â
DC Current Gain (IC = â5.0 mAdc, VCE = â10 Vdc)
hFE
60
CollectorâEmitter Saturation Voltage (IC = â5.0 mAdc, IB = â0.5 mAdc)
VCE(sat)
â
BaseâEmitter On Voltage (IC = â5.0 mAdc, VCE = â10 Vdc)
VBE(on)
â
SMALLâSIGNAL CHARACTERISTICS
CurrentâGain â Bandwidth Product
(IC = â5.0 mAdc, VCE = â10 Vdc, f = 100 MHz)
fT
600
CollectorâBase Capacitance (VCB = â10 Vdc, IE = 0, f = 1.0 MHz)
CollectorâEmitter Capacitance (IB = 0, VCB = â10 Vdc, f = 1.0 MHz)
Ccb
â
Cce
â
1. FRâ5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
Thermal Clad is a trademark of the Bergquist Company
Preferred devices are Motorola recommended choices for future use and best overall value.
3
1
2
CASE 318 â 08, STYLE 6
SOTâ 23 (TO â 236AB)
Max
225
1.8
556
300
2.4
417
â 55 to +150
Unit
mW
mW/°C
°C/W
mW
mW/°C
°C/W
°C
Typ
Max
Unit
â
â
Vdc
â
â
Vdc
â
â
Vdc
â
â100
nAdc
â
â100
nAdc
â
â
â
â
â0.5
Vdc
â
â0.9
Vdc
â
â
MHz
â
0.85
pF
â
0.65
pF
©MMotootorroollaa,
SmallâSignal
Inc. 1996
Transistors,
FETs
and
Diodes
Device
Data
1
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