MMBTH69LT1 Datasheet, PDF (1/4 Pages) Motorola, Inc – UHF/VHF Transistor

MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MMBTH69LT1/D
UHF/VHF Transistor
PNP Silicon
COLLECTOR
3
• Designed for UHF/VHF Amplifier Applications
1
• High Current Gain Bandwidth Product
BASE
fT = 2000 MHz Min @ 10 mA
MAXIMUM RATINGS
2
EMITTER
Rating
Symbol
Value
Unit
Collector–Emitter Voltage
Collector–Base Voltage
Emitter–Base Voltage
DEVICE MARKING
VCEO
–15
Vdc
VCBO
–15
Vdc
VEBO
–4.0
Vdc
MMBTH69LT1 = M3J
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR-5 Board ⁽¹⁾
TA = 25°C
Derate above 25°C
Symbol
PD
Thermal Resistance Junction to Ambient
Total Device Dissipation
Alumina Substrate, ⁽²⁾ TA = 25°C
Derate above 25°C
R_θJA
PD
Thermal Resistance Junction to Ambient
R_θJA
Junction and Storage Temperature
TJ, Tstg
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage (IC = –1.0 mAdc, IB = 0)
Collector–Base Breakdown Voltage (IC = –10 µAdc, IE = 0)
Emitter–Base Breakdown Voltage (IE = –10 µAdc, IC = 0)
Collector Cutoff Current (VCB = –10 Vdc, IE = 0)
ON CHARACTERISTICS
V(BR)CEO
–15
V(BR)CBO
–15
V(BR)EBO
–4.0
ICBO
—
DC Current Gain (IC = –10 mAdc, VCE = –10 Vdc)
SMALL–SIGNAL CHARACTERISTICS
hFE
30
Current–Gain – Bandwidth Product
(IC = –10 mAdc, VCE = –10 Vdc, f = 100 MHz)
fT
2000
Collector–Base Capacitance
(VCE = –10 Vdc, IE = 0, f = 1.0 MHz)
Crb
—
1. FR–5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina
MMBTH69LT1
Motorola Preferred Device
3
1
2
CASE 318 – 08, STYLE 6
SOT– 23 (TO – 236AB)
Max
225
1.8
556
300
2.4
417
– 55 to +150
Unit
mW
mW/°C
°C/W
mW
mW/°C
°C/W
°C
Typ
Max
Unit
—
—
Vdc
—
—
Vdc
—
—
Vdc
—
–100
nAdc
—
300
—
—
—
MHz
—
0.35
pF
Thermal Clad is a registered trademark of the Berquist Company.
Preferred devices are Motorola recommended choices for future use and best overall value.
©^MM^oto^oto^rr^oo^ll^aa,
Small–Signal
Inc. 1996
Transistors,
FETs
and
Diodes
Device
Data
1