MMBTA92LT1 Datasheet, PDF (1/6 Pages) Motorola, Inc – High Voltage Transistors

MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MMBTA92LT1/D
High Voltage Transistors
PNP Silicon
COLLECTOR
3
1
BASE
MMBTA92LT1*
MMBTA93LT1
*Motorola Preferred Device
2
EMITTER
MAXIMUM RATINGS
Rating
Symbol MMBTA92 MMBTA93 Unit
Collector – Emitter Voltage
Collector – Base Voltage
Emitter – Base Voltage
Collector Current — Continuous
DEVICE MARKING
VCEO
VCBO
VEBO
IC
–300
–200
–300
–200
–5.0
–5.0
–500
Vdc
Vdc
Vdc
mAdc
MMBTA92LT1 = 2D; MMBTA93LT1 = 2E
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR–5 Board,(1)
TA = 25°C
Derate above 25°C
Symbol
PD
Thermal Resistance, Junction to Ambient
Total Device Dissipation
Alumina Substrate,(2) TA = 25°C
Derate above 25°C
R_qJA
PD
Thermal Resistance, Junction to Ambient
R_qJA
Junction and Storage Temperature
TJ, Tstg
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Collector – Emitter Breakdown Voltage(3)
(IC = –1.0 mAdc, IB = 0)
MMBTA92
MMBTA93
Collector – Base Breakdown Voltage
(IC = –100 mAdc, IE = 0)
MMBTA92
MMBTA93
Emitter – Base Breakdown Voltage
(IE = –100 mAdc, IC = 0)
Collector Cutoff Current
(VCB = –200 Vdc, IE = 0)
(VCB = –160 Vdc, IE = 0)
Emitter Cutoff Current
(VEB = –3.0 Vdc, IC = 0)
MMBTA92
MMBTA93
1. FR–5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
3. Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%.
Thermal Clad is a trademark of the Bergquist Company
Preferred devices are Motorola recommended choices for future use and best overall value.
3
1
2
CASE 318 – 08, STYLE 6
SOT– 23 (TO – 236AB)
Max
225
1.8
556
300
2.4
417
–55 to +150
Unit
mW
mW/°C
°C/W
mW
mW/°C
°C/W
°C
Symbol
Min
Max
Unit
V(BR)CEO
V(BR)CBO
V(BR)EBO
–300
–200
–300
–200
–5.0
ICBO
—
—
IEBO
—
—
—
—
—
—
–0.25
–0.25
–0.1
Vdc
Vdc
Vdc
µAdc
µAdc
Motorola Small–Signal Transistors, FETs and Diodes Device Data
1
© Motorola, Inc. 1996