MMBTA70LT1 Datasheet, PDF (1/8 Pages) Motorola, Inc – General Purpose Transistor

MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MMBTA70LT1/D
General Purpose Transistor
PNP Silicon
COLLECTOR
3
MMBTA70LT1
1
BASE
MAXIMUM RATINGS
2
EMITTER
Rating
Symbol
Value
Unit
Collector–Emitter Voltage
Emitter–Base Voltage
Collector Current — Continuous
DEVICE MARKING
VCEO
VEBO
IC
–40
–4.0
–100
Vdc
Vdc
mAdc
MMBTA70LT1 = M2C
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR-5 Board,(1)
TA = 25°C
Derate above 25°C
Symbol
PD
Thermal Resistance, Junction to Ambient
Total Device Dissipation
Alumina Substrate,(2) TA = 25°C
Derate above 25°C
R_θJA
PD
Thermal Resistance, Junction to Ambient
Junction and Storage Temperature
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
R_θJA
TJ, Tstg
Symbol
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage
(IC = –1.0 mAdc, IB = 0)
V(BR)CEO
Emitter–Base Breakdown Voltage
(IE = –100 µAdc, IC = 0)
V(BR)EBO
Collector Cutoff Current
(VCB = –30 Vdc, IE = 0)
ICBO
ON CHARACTERISTICS
DC Current Gain
hFE
(IC = –5.0 mAdc, VCE = –10 Vdc)
Collector–Emitter Saturation Voltage
(IC = –10 mAdc, IB = –1.0 mAdc)
VCE(sat)
SMALL–SIGNAL CHARACTERISTICS
Current–Gain – Bandwidth Product
fT
(IC = –5.0 mAdc, VCE = –10 Vdc, f = 100 MHz)
Output Capacitance (VCB = –10 Vdc, IE = 0, f = 1.0 MHz)
Cobo
1. FR–5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
3
1
2
CASE 318 – 08, STYLE 6
SOT– 23 (TO – 236AB)
Max
225
1.8
556
300
2.4
417
– 55 to +150
Min
Max
–40
—
–4.0
—
—
–100
Unit
mW
mW/°C
°C/W
mW
mW/°C
°C/W
°C
Unit
Vdc
Vdc
nAdc
40
400
—
—
–0.25
Vdc
125
—
—
4.0
MHz
pF
Thermal Clad is a trademark of the Bergquist Company
©^MM^oto^oto^rr^oo^ll^aa,
Small–Signal
Inc. 1996
Transistors,
FETs
and
Diodes
Device
Data
1