|
MMBTA55LT1 Datasheet, PDF (1/4 Pages) Motorola, Inc – Driver Transistors | |||
|
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MMBTA55LT1/D
Driver Transistors
PNP Silicon
COLLECTOR
3
1
BASE
MMBTA55LT1
MMBTA56LT1*
*Motorola Preferred Device
MAXIMUM RATINGS
Rating
Collector â Emitter Voltage
Collector â Base Voltage
Emitter â Base Voltage
Collector Current â Continuous
DEVICE MARKING
Symbol
VCEO
VCBO
VEBO
IC
2
EMITTER
MMBTA55 MMBTA56
â60
â80
â60
â80
â4.0
â500
Unit
Vdc
Vdc
Vdc
mAdc
3
1
2
CASE 318 â 08, STYLE 6
SOTâ 23 (TO â 236AB)
MMBTA55LT1 = 2H; MMBTA56LT1 = 2GM
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FRâ5 Board,(1)
TA = 25°C
Derate above 25°C
Symbol
PD
Max
Unit
225
mW
1.8
mW/°C
Thermal Resistance, Junction to Ambient
Total Device Dissipation
Alumina Substrate,(2) TA = 25°C
Derate above 25°C
RqJA
PD
556
°C/W
300
mW
2.4
mW/°C
Thermal Resistance, Junction to Ambient
RqJA
Junction and Storage Temperature
TJ, Tstg
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
417
â55 to +150
°C/W
°C
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Collector â Emitter Breakdown Voltage(3)
(IC = â1.0 mAdc, IB = 0)
Emitter â Base Breakdown Voltage (IE = â100 mAdc, IC = 0)
Collector Cutoff Current (VCE = â60 Vdc, IB = 0)
Collector Cutoff Current (VCB = â60 Vdc, IE = 0)
Collector Cutoff Current (VCB = â80 Vdc, IE = 0)
ON CHARACTERISTICS
MMBTA55
MMBTA56
MMBTA55
MMBTA56
V(BR)CEO â60
â
Vdc
â80
â
V(BR)EBO â4.0
â
Vdc
ICES
â
â0.1
µAdc
ICBO
â
â0.1
µAdc
â
â0.1
DC Current Gain (IC = â10 mAdc, VCE = â1.0 Vdc)
DC Current Gain (IC = â100 mAdc, VCE = â1.0 Vdc)
hFE
100
â
â
100
â
Collector â Emitter Saturation Voltage (IC = â100 mAdc, IB = â10 mAdc)
BaseâEmitter On Voltage (IC = â100 mAdc, VCE = â1.0 Vdc)
VCE(sat)
â
VBE(on)
â
â0.25
Vdc
â1.2
Vdc
SMALLâ SIGNAL CHARACTERISTICS
Current â Gain â Bandwidth Product(4)
(IC = â100 mAdc, VCE = â1.0 Vdc, f = 100 MHz)
fT
50
â
MHz
1. FRâ5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
3. Pulse Test: Pulse Width ⤠300 µs, Duty Cycle ⤠2.0%.
4. fT is defined as the frequency at which |hfe| extrapolates to unity.
Thermal Clad is a trademark of the Bergquist Company
Preferred devices are Motorola recommended choices for future use and best overall value.
Motorola SmallâSignal Transistors, FETs and Diodes Device Data
1
© Motorola, Inc. 1996
|
▷ |