MMBTA05LT1 Datasheet, PDF (1/4 Pages) Motorola, Inc – Driver Transistors

MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MMBTA05LT1/D
Driver Transistors
NPN Silicon
COLLECTOR
3
MMBTA05LT1
MMBTA06LT1*
*Motorola Preferred Device
1
BASE
MAXIMUM RATINGS
2
EMITTER
Rating
Symbol MMBTA05 MMBTA06 Unit
Collector – Emitter Voltage
Collector – Base Voltage
Emitter – Base Voltage
Collector Current — Continuous
THERMAL CHARACTERISTICS
VCEO
VCBO
VEBO
IC
60
80
60
80
4.0
500
Vdc
Vdc
Vdc
mAdc
Characteristic
Symbol
Max
Unit
Total Device Dissipation FR– 5 Board(1)
PD
TA = 25°C
Derate above 25°C
225
mW
1.8
mW/°C
Thermal Resistance, Junction to Ambient
Total Device Dissipation
Alumina Substrate,(2) TA = 25°C
Derate above 25°C
R_qJA
PD
556
°C/W
300
mW
2.4
mW/°C
Thermal Resistance, Junction to Ambient
Junction and Storage Temperature
DEVICE MARKING
R_qJA
TJ, Tstg
417
– 55 to +150
°C/W
°C
MMBTA05LT1 = 1H; MMBTA06LT1 = 1GM
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Collector – Emitter Breakdown Voltage (3)
(IC = 1.0 mAdc, IB = 0)
MMBTA05
MMBTA06
Emitter – Base Breakdown Voltage
(IE = 100 mAdc, IC = 0)
Collector Cutoff Current
(VCE = 60 Vdc, IB = 0)
Collector Cutoff Current
(VCB = 60 Vdc, IE = 0)
(VCB = 80 Vdc, IE = 0)
  1. FR– 5 = 1.0 0.75 0.062 in.
  2. Alumina = 0.4 0.3 0.024 in. 99.5% alumina.
v v 3. Pulse Test: Pulse Width 300 ms, Duty Cycle 2.0%.
MMBTA05
MMBTA06
Symbol
V(BR)CEO
V(BR)EBO
ICES
ICBO
3
1
2
CASE 318 – 08, STYLE 6
SOT– 23 (TO – 236AB)
Min
Max
Unit
Vdc
60
—
80
—
4.0
—
Vdc
—
0.1
mAdc
mAdc
—
0.1
—
0.1
Thermal Clad is a trademark of the Bergquist Company
Preferred devices are Motorola recommended choices for future use and best overall value.
©^MM^oto^oto^rr^oo^ll^aa,
Small–Signal
Inc. 1996
Transistors,
FETs
and
Diodes
Device
Data
1