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MMBT6520LT1 Datasheet, PDF (1/8 Pages) ON Semiconductor – High Voltage Transistor | |||
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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MMBT6520LT1/D
High Voltage Transistor
PNP Silicon
COLLECTOR
3
MMBT6520LT1
Motorola Preferred Device
1
BASE
2
EMITTER
MAXIMUM RATINGS
Rating
Symbol
Value
CollectorâEmitter Voltage
CollectorâBase Voltage
EmitterâBase Voltage
Base Current
Collector Current â Continuous
DEVICE MARKING
VCEO
VCBO
VEBO
IB
IC
â350
â350
â5.0
â250
â500
MMBT6520LT1 = 2Z
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR-5 Board (1)
TA = 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient
Total Device Dissipation
Alumina Substrate, (2) TA = 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient
Junction and Storage Temperature
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
CollectorâEmitter Breakdown Voltage (IC = â1.0 mA)
CollectorâBase Breakdown Voltage (IC = â100 µA)
EmitterâBase Breakdown Voltage (IE = â10 µA)
Collector Cutoff Current (VCB = â250 V)
Emitter Cutoff Current (VEB = â4.0 V)
1. FRâ5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina
Unit
Vdc
Vdc
Vdc
mA
mAdc
Symbol
PD
RθJA
PD
RθJA
TJ, Tstg
Symbol
V(BR)CEO
V(BR)CBO
V(BR)EBO
ICBO
IEBO
3
1
2
CASE 318 â 08, STYLE 6
SOTâ 23 (TO â 236AB)
Max
225
1.8
556
300
2.4
417
â 55 to +150
Unit
mW
mW/°C
°C/W
mW
mW/°C
°C/W
°C
Min
Max
Unit
â350
â
Vdc
â350
â
Vdc
â5.0
â
Vdc
â
â50
nA
â
â50
nA
Thermal Clad is a trademark of the Bergquist Company
Preferred devices are Motorola recommended choices for future use and best overall value.
©MMotootorroollaa,
SmallâSignal
Inc. 1996
Transistors,
FETs
and
Diodes
Device
Data
1
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