MMBT6517LT1 Datasheet, PDF (1/8 Pages) Motorola, Inc – High Voltage Transistor

MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MMBT6517LT1/D
High Voltage Transistor
NPN Silicon
COLLECTOR
3
MMBT6517LT1
Motorola Preferred Device
1
BASE
MAXIMUM RATINGS
Rating
Collector – Emitter Voltage
Collector – Base Voltage
Emitter – Base Voltage
Base Current
Collector Current — Continuous
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR– 5 Board(1)
TA = 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient
Total Device Dissipation
Alumina Substrate,(2) TA = 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient
Junction and Storage Temperature
DEVICE MARKING
MMBT6517LT1 = 1Z
Symbol
VCEO
VCBO
VEBO
IB
IC
Value
350
350
5.0
250
500
Symbol
PD
R_qJA
PD
R_qJA
TJ, Tstg
Max
225
1.8
556
300
2.4
417
– 55 to +150
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Collector – Emitter Breakdown Voltage
(IC = 1.0 mAdc)
Collector – Base Breakdown Voltage
(IC = 100 mAdc)
Emitter – Base Breakdown Voltage
(IE = 10 mAdc)
Collector Cutoff Current
(VCB = 250 Vdc)
Emitter Cutoff Current
(VEB = 5.0 Vdc)
  1. FR– 5 = 1.0 0.75 0.062 in.
  2. Alumina = 0.4 0.3 0.024 in. 99.5% alumina.
2
EMITTER
Unit
Vdc
Vdc
Vdc
mAdc
mAdc
Unit
mW
mW/°C
°C/W
mW
mW/°C
°C/W
°C
Symbol
V(BR)CEO
V(BR)CBO
V(BR)EBO
ICBO
IEBO
3
1
2
CASE 318 – 08, STYLE 6
SOT– 23 (TO – 236AB)
Min
Max
Unit
Vdc
350
—
Vdc
350
—
Vdc
6.0
—
nAdc
—
50
nAdc
—
50
Thermal Clad is a trademark of the Bergquist Company.
Preferred devices are Motorola recommended choices for future use and best overall value.
©^MM^oto^oto^rr^oo^ll^aa,
Small–Signal
Inc. 1996
Transistors,
FETs
and
Diodes
Device
Data
1