MMBT589LT1 Datasheet, PDF (1/6 Pages) ON Semiconductor – High Current Surface Mount PNP Silicon Switching Transistor

MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
High Current Surface Mount
PNP Silicon Switching Transistor
for Load Management
in Portable Applications
A Device of the mX™ Family
COLLECTOR
3
1
BASE
2
EMITTER
MAXIMUM RATINGS (TA = 25°C)
Rating
Collector – Emitter Voltage
Collector – Base Voltage
Emitter – Base Voltage
Collector Current — Continuous
Collector Current — Peak
DEVICE MARKING
MMBT589LT1 = G3
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation
TA = 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient
Total Device Dissipation
TA = 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient
Total Device Dissipation
(Single Pulse < 10 sec.)
Junction and Storage Temperature
1. FR– 4 @ Minimum Pad
2. FR– 4 @ 1.0 X 1.0 inch Pad
3. ref: Figure 8
Symbol
VCEO
VCBO
VEBO
IC
ICM
Max
–30
– 50
– 5.0
–1.0
–2.0
Symbol
PD ⁽¹⁾
R_qJA ⁽¹⁾
PD ⁽²⁾
R_qJA ⁽²⁾
PDsingle ⁽³⁾
TJ, Tstg
Max
310
2.5
403
710
5.7
176
575
– 55 to +150
Unit
Vdc
Vdc
Vdc
Adc
A
Unit
mW
mW/°C
°C/W
mW
mW/°C
°C/W
mW
°C
Order this document
by MMBT589LT1/D
MMBT589LT1
30 Volts
2.0 Amps
PNP Transistor
3
1
2
CASE 318 – 08, STYLE 6
SOT23LF (TO – 236AB)
Thermal Clad is a trademark of the Bergquist Company
mX ™: MicroExecutive Family of High Performance Surface Mount Devices
©^MM^oto^oto^rr^oo^ll^aa,
Small–Signal
Inc. 1998
Transistors,
FETs
and
Diodes
Device
Data
1