MMBT5087LT1 Datasheet, PDF (1/8 Pages) Motorola, Inc – Low Noise Transistor

MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
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by MMBT5087LT1/D
Low Noise Transistor
PNP Silicon
COLLECTOR
3
1
BASE
MMBT5087LT1
Motorola Preferred Device
MAXIMUM RATINGS
2
EMITTER
Rating
Symbol
Value
Unit
Collector–Emitter Voltage
Collector–Base Voltage
VCEO
–50
Vdc
VCBO
–50
Vdc
Emitter–Base Voltage
Collector Current — Continuous
DEVICE MARKING
VEBO
–3.0
Vdc
IC
–50
mAdc
MMBT5087LT1 = 2Q
THERMAL CHARACTERISTICS
Characteristic
Symbol
Total Device Dissipation FR-5 Board ⁽¹⁾
PD
TA = 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient
Total Device Dissipation
Alumina Substrate, ⁽²⁾ TA = 25°C
Derate above 25°C
R_θJA
PD
Thermal Resistance, Junction to Ambient
Junction and Storage Temperature
R_θJA
TJ, Tstg
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage
(IC = –1.0 mAdc, IB = 0)
V(BR)CEO
Collector–Base Breakdown Voltage
(IC = –100 µAdc, IE = 0)
V(BR)CBO
Collector Cutoff Current
(VCB = –10 Vdc, IE = 0)
(VCB = –35 Vdc, IE = 0)
ICBO
1. FR–5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina
3
1
2
CASE 318 – 08, STYLE 6
SOT– 23 (TO – 236AB)
Max
225
1.8
556
300
2.4
417
– 55 to +150
Unit
mW
mW/°C
°C/W
mW
mW/°C
°C/W
°C
Min
Max
Unit
–50
—
Vdc
–50
—
Vdc
nAdc
—
–10
—
–50
Thermal Clad is a trademark of the Bergquist Company
Preferred devices are Motorola recommended choices for future use and best overall value.
©^MM^oto^oto^rr^oo^ll^aa,
Small–Signal
Inc. 1996
Transistors,
FETs
and
Diodes
Device
Data
1