|
MMBT4401LT1 Datasheet, PDF (1/8 Pages) Motorola, Inc – Switching Transistor | |||
|
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MMBT4401LT1/D
Switching Transistor
NPN Silicon
COLLECTOR
3
MMBT4401LT1
Motorola Preferred Device
1
BASE
MAXIMUM RATINGS
Rating
Collector â Emitter Voltage
Collector â Base Voltage
Emitter â Base Voltage
Collector Current â Continuous
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FRâ 5 Board(1)
TA = 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient
Total Device Dissipation
Alumina Substrate,(2) TA = 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient
Junction and Storage Temperature
DEVICE MARKING
MMBT4401LT1 = 2X
Symbol
VCEO
VCBO
VEBO
IC
Value
40
60
6.0
600
Symbol
PD
RqJA
PD
RqJA
TJ, Tstg
Max
225
1.8
556
300
2.4
417
â 55 to +150
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Collector â Emitter Breakdown Voltage(3)
(IC = 1.0 mAdc, IB = 0)
Collector â Base Breakdown Voltage
(IC = 0.1 mAdc, IE = 0)
Emitter â Base Breakdown Voltage
(IE = 0.1 mAdc, IC = 0)
Base Cutoff Current
(VCE = 35 Vdc, VEB = 0.4 Vdc)
Collector Cutoff Current
(VCE = 35 Vdc, VEB = 0.4 Vdc)
1. FRâ 5 = 1.0 0.75 0.062 in.
2. Alumina = 0.4 0.3 0.024 in. 99.5% alumina.
3. Pulse Test: Pulse Width ⤠300 µs, Duty Cycle ⤠2.0%.
2
EMITTER
Unit
Vdc
Vdc
Vdc
mAdc
Unit
mW
mW/°C
°C/W
mW
mW/°C
°C/W
°C
Symbol
V(BR)CEO
V(BR)CBO
V(BR)EBO
IBEV
ICEX
3
1
2
CASE 318 â 08, STYLE 6
SOTâ 23 (TO â 236AB)
Min
Max
Unit
Vdc
40
â
Vdc
60
â
Vdc
6.0
â
µAdc
â
0.1
µAdc
â
0.1
Thermal Clad is a trademark of the Bergquist Company.
Preferred devices are Motorola recommended choices for future use and best overall value.
©MMotootorroollaa,
SmallâSignal
Inc. 1996
Transistors,
FETs
and
Diodes
Device
Data
1
|
▷ |