MMBT404ALT1 Datasheet, PDF (1/4 Pages) Motorola, Inc – Chopper Transistor

MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
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by MMBT404ALT1/D
Chopper Transistor
PNP Silicon
COLLECTOR
3
MMBT404ALT1
Motorola Preferred Device
1
BASE
2
EMITTER
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector–Emitter Voltage
Collector–Base Voltage
Emitter–Base Voltage
Collector Current — Continuous
DEVICE MARKING
VCEO
VCBO
VEBO
IC
–35
–40
–25
–150
Vdc
Vdc
Vdc
mAdc
MMBT404ALT1 = 2N
THERMAL CHARACTERISTICS
Characteristic
Symbol
Total Device Dissipation FR-5 Board,*
PD
TA = 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient
Total Device Dissipation
Alumina Substrate,** TA = 25°C
Derate above 25°C
R_θJA
PD
Thermal Resistance, Junction to Ambient
R_θJA
Junction and Storage Temperature
TJ, Tstg
* FR–5 = 1.0 x 0.75 x 0.062 in.
** Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage
(IC = –10 mAdc, IB = 0)
V(BR)CEO
–35
Collector–Emitter Breakdown Voltage
(IC = –10 µAdc, IE = 0)
V(BR)CBO
–40
Emitter–Base Breakdown Voltage
(IE = –10 µAdc, IC = 0)
V(BR)EBO
–25
Collector Cutoff Current
(VCB = –10 Vdc, IE = 0)
ICBO
—
Emitter Cutoff Current
(VEB = –10 Vdc, IC = 0)
IEBO
—
Thermal Clad is a trademark of the Bergquist Company
Preferred devices are Motorola recommended choices for future use and best overall value.
3
1
2
CASE 318 – 08, STYLE 6
SOT– 23 (TO – 236AB)
Max
225
1.8
556
300
2.4
417
– 55 to +150
Unit
mW
mW/°C
°C/W
mW
mW/°C
°C/W
°C
Typ
Max
Unit
—
—
Vdc
—
—
Vdc
—
—
Vdc
—
–100
nAdc
—
–100
nAdc
Motorola Small–Signal Transistors, FETs and Diodes Device Data
1
© Motorola, Inc. 1996