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MMBT3904WT1 Datasheet, PDF (1/12 Pages) Motorola, Inc – General Purpose Transistor | |||
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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
MMBT3904WT1/D
General Purpose Transistors
NPN and PNP Silicon
These transistors are designed for general purpose amplifier applications. They are
housed in the SOTâ323/SCâ70 which is designed for low power surface mount
applications.
NPN
MMBT3904WT1
PNP
MMBT3906WT1
MAXIMUM RATINGS
Rating
Collector â Emitter Voltage
MMBT3904WT1
MMBT3906WT1
Collector â Base Voltage
MMBT3904WT1
MMBT3906WT1
Emitter â Base Voltage
MMBT3904WT1
MMBT3906WT1
Collector Current â Continuous MMBT3904WT1
MMBT3906WT1
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation(1)
TA = 25°C
Thermal Resistance, Junction to Ambient
Junction and Storage Temperature
DEVICE MARKING
MMBT3904WT1 = AM
MMBT3906WT1 = 2A
Symbol
VCEO
VCBO
VEBO
IC
Symbol
PD
RqJA
TJ, Tstg
Value
40
â40
60
â40
6.0
â5.0
200
â200
Max
150
833
â 55 to +150
Unit
Vdc
Vdc
Vdc
mAdc
Unit
mW
°C/W
°C
GENERAL PURPOSE
AMPLIFIER TRANSISTORS
SURFACE MOUNT
3
1
2
CASE 419â02, STYLE 3
SOTâ323/SCâ70
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Collector â Emitter Breakdown Voltage(2)
(IC = 1.0 mAdc, IB = 0)
(IC = â1.0 mAdc, IB = 0)
Collector â Base Breakdown Voltage
(IC = 10 mAdc, IE = 0)
(IC = â10 mAdc, IE = 0)
Emitter â Base Breakdown Voltage
(IE = 10 mAdc, IC = 0)
(IE = â10 mAdc, IC = 0)
Base Cutoff Current
(VCE = 30 Vdc, VEB = 3.0 Vdc)
(VCE = â30 Vdc, VEB = â3.0 Vdc)
Collector Cutoff Current
(VCE = 30 Vdc, VEB = 3.0 Vdc)
(VCE = â30 Vdc, VEB = â3.0 Vdc)
MMBT3904WT1
MMBT3906WT1
MMBT3904WT1
MMBT3906WT1
MMBT3904WT1
MMBT3906WT1
MMBT3904WT1
MMBT3906WT1
MMBT3904WT1
MMBT3906WT1
V(BR)CEO
40
Vdc
â
â40
â
V(BR)CBO
60
Vdc
â
â40
â
V(BR)EBO
Vdc
6.0
â
â5.0
â
IBL
nAdc
â
50
â
â50
ICEX
â
nAdc
50
â
â50
v v 1. Device mounted on FR4 glass epoxy printed circuit board using the minimum recommended footprint.
2. Pulse Test: Pulse Width 300 ms; Duty Cycle 2.0%.
Thermal Clad is a trademark of the Bergquist Company.
©MMotootorroollaa,
SmallâSignal
Inc. 1996
Transistors,
FETs
and
Diodes
Device
Data
1
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