MMBT3640LT1 Datasheet, PDF (1/6 Pages) Motorola, Inc – Switching Transistor

MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MMBT3640LT1/D
Switching Transistor
PNP Silicon
COLLECTOR
3
1
BASE
MMBT3640LT1
Motorola Preferred Device
MAXIMUM RATINGS
Rating
Collector – Emitter Voltage
Collector – Base Voltage
Emitter – Base Voltage
Collector Current — Continuous
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR– 5 Board(1)
TA = 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient
Total Device Dissipation
Alumina Substrate,(2) TA = 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient
Junction and Storage Temperature
DEVICE MARKING
MMBT3640LT1 = 2J
Symbol
VCEO
VCBO
VEBO
IC
Value
–12
–12
–4.0
–80
2
EMITTER
Unit
Vdc
Vdc
Vdc
mAdc
Symbol
PD
R_qJA
PD
R_qJA
TJ, Tstg
Max
225
1.8
556
300
2.4
417
– 55 to +150
Unit
mW
mW/°C
°C/W
mW
mW/°C
°C/W
°C
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Collector – Emitter Breakdown Voltage (IC = –100 µAdc, VBE = 0)
Collector – Emitter Sustaining Voltage(1) (IC = –10 mAdc, IB = 0)
Collector – Base Breakdown Voltage (IC = –100 mAdc, IE = 0)
Emitter – Base Breakdown Voltage (IE = –100 mAdc, IC = 0)
Collector Cutoff Current
(VCE = –6.0 Vdc, VBE = 0)
(VCE = –6.0 Vdc, VBE = 0, TA = 65°C)
Base Cutoff Current (VCE = –6.0 Vdc, VEB = 0)
  1. FR– 5 = 1.0 0.75 0.062 in.
  2. Alumina = 0.4 0.3 0.024 in. 99.5% alumina.
Symbol
V(BR)CES
VCEO(sus)
V(BR)CBO
V(BR)EBO
ICES
IB
3
1
2
CASE 318 – 08, STYLE 6
SOT– 23 (TO – 236AB)
Min
Max
Unit
–12
—
Vdc
–12
—
Vdc
–12
—
Vdc
–4.0
—
Vdc
µAdc
—
–0.01
—
–1.0
—
–10
nAdc
Thermal Clad is a trademark of the Bergquist Company.
Preferred devices are Motorola recommended choices for future use and best overall value.
©^MM^oto^oto^rr^oo^ll^aa,
Small–Signal
Inc. 1996
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and
Diodes
Device
Data
1