MMBT2907AWT1 Datasheet, PDF (1/4 Pages) Motorola, Inc – General Purpose Transistor

MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
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by MMBT2907AWT1/D
Preliminary Information
General Purpose Transistor
PNP Silicon
These transistors are designed for general purpose amplifier
applications. They are housed in the SOT–323/SC–70 package
which is designed for low power surface mount applications.
COLLECTOR
3
1
BASE
MMBT2907AWT1
Motorola Preferred Device
3
1
2
MAXIMUM RATINGS
Rating
Collector – Emitter Voltage
Collector – Base Voltage
Emitter – Base Voltage
Collector Current — Continuous
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR– 5 Board(1)
TA = 25°C
Thermal Resistance Junction to Ambient
Junction and Storage Temperature
DEVICE MARKING
MMBT2907AWT1 = 2F
Symbol
VCEO
VCBO
VEBO
IC
Value
–60
–60
–5.0
–600
Symbol
PD
R_qJA
TJ, Tstg
Max
150
833
– 55 to +150
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Collector – Emitter Breakdown Voltage(2)
(IC = –10 mAdc, IB = 0)
Collector – Base Breakdown Voltage
(IC = –10 mAdc, IE = 0)
Emitter – Base Breakdown Voltage
(IE = –10 mAdc, IC = 0)
Base Cutoff Current
(VCE = –30 Vdc, VEB(off) = –0.5 Vdc)
Collector Cutoff Current
(VCE = –30 Vdc, VEB(off) = –0.5 Vdc)
v v ^{1. FR–5 = 1.0 x 0.75 x 0.062 in.}
2. Pulse Test: Pulse Width 300 ms, Duty Cycle 2.0%.
2
EMITTER
Unit
Vdc
Vdc
Vdc
mAdc
Unit
mW
°C/W
°C
Symbol
V(BR)CEO
V(BR)CBO
V(BR)EBO
IBL
ICEX
CASE 419 – 02, STYLE 3
SOT– 323/SC – 70
Min
Max
Unit
–60
—
Vdc
–60
—
Vdc
–5.0
—
Vdc
—
–50
nAdc
—
–50
nAdc
Thermal Clad is a registered trademark of the Berquist Company.
Preferred devices are Motorola recommended choices for future use and best overall value.
©^MM^oto^oto^rr^oo^ll^aa,
Small–Signal
Inc. 1997
Transistors,
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and
Diodes
Device
Data
1