MMBT2222LT1 Datasheet, PDF (1/8 Pages) Motorola, Inc – General Purpose Transistors

MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MMBT2222LT1/D
General Purpose Transistors
NPN Silicon
COLLECTOR
3
1
BASE
MMBT2222LT1
MMBT2222ALT1*
*Motorola Preferred Device
MAXIMUM RATINGS
2
EMITTER
Rating
Symbol
2222
2222A Unit
Collector – Emitter Voltage
Collector – Base Voltage
Emitter – Base Voltage
Collector Current — Continuous
THERMAL CHARACTERISTICS
VCEO
VCBO
VEBO
IC
30
40
60
75
5.0
6.0
600
Vdc
Vdc
Vdc
mAdc
Characteristic
Total Device Dissipation FR– 5 Board(1)
TA = 25°C
Derate above 25°C
Symbol
PD
Max
Unit
225
mW
1.8
mW/°C
Thermal Resistance, Junction to Ambient
Total Device Dissipation
Alumina Substrate,(2) TA = 25°C
Derate above 25°C
R_qJA
PD
556
°C/W
300
mW
2.4
mW/°C
Thermal Resistance, Junction to Ambient
Junction and Storage Temperature
DEVICE MARKING
R_qJA
TJ, Tstg
417
– 55 to +150
°C/W
°C
MMBT2222LT1 = M1B; MMBT2222ALT1 = 1P
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
OFF CHARACTERISTICS
Collector – Emitter Breakdown Voltage (IC = 10 mAdc, IB = 0)
MMBT2222
MMBT2222A
V(BR)CEO
Collector – Base Breakdown Voltage (IC = 10 mAdc, IE = 0)
MMBT2222
MMBT2222A
V(BR)CBO
Emitter – Base Breakdown Voltage (IE = 10 mAdc, IC = 0)
MMBT2222
MMBT2222A
V(BR)EBO
Collector Cutoff Current (VCE = 60 Vdc, VEB(off) = 3.0 Vdc)
Collector Cutoff Current (VCB = 50 Vdc, IE = 0)
(VCB = 60 Vdc, IE = 0)
(VCB = 50 Vdc, IE = 0, TA = 125°C)
(VCB = 60 Vdc, IE = 0, TA = 125°C)
Emitter Cutoff Current (VEB = 3.0 Vdc, IC = 0)
Base Cutoff Current (VCE = 60 Vdc, VEB(off) = 3.0 Vdc)
  1. FR– 5 = 1.0 0.75 0.062 in.
  2. Alumina = 0.4 0.3 0.024 in. 99.5% alumina.
MMBT2222A
MMBT2222
MMBT2222A
MMBT2222
MMBT2222A
MMBT2222A
MMBT2222A
ICEX
ICBO
IEBO
IBL
3
1
2
CASE 318 – 08, STYLE 6
SOT– 23 (TO – 236AB)
Min
Max
Unit
30
—
Vdc
40
—
60
—
Vdc
75
—
5.0
—
Vdc
6.0
—
—
10
nAdc
—
0.01
µAdc
—
0.01
—
10
—
10
—
100
nAdc
—
20
nAdc
Thermal Clad is a trademark of the Bergquist Company.
Preferred devices are Motorola recommended choices for future use and best overall value.
©^MM^oto^oto^rr^oo^ll^aa,
Small–Signal
Inc. 1996
Transistors,
FETs
and
Diodes
Device
Data
1