MMBR5031LT1 Datasheet, PDF (1/2 Pages) Motorola, Inc – NPN Silicon High-Frequency Transistor

MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MMBR5031LT1/D
The RF Line
NPN Silicon
High-Frequency Transistor
MMBR5031LT1
Designed for thick and thin–film circuits using surface mount components
and requiring low–noise, high–gain signal amplification at frequencies to 1.0
GHz.
• High Gain — Gpe = 17 dB Typ @ f = 450 MHz
• Low Noise — NF = 2.5 dB Typ @ f = 450 MHz
• Available in tape and reel packaging options:
T1 suffix = 3,000 units per reel
MAXIMUM RATINGS
Rating
Collector–Emitter Voltage
Collector–Base Voltage
Emitter–Base Voltage
Collector Current — Continuous
Maximum Junction Temperature
Power Dissipation, Tcase = 75°C (1)
Derate linearly above Tcase = 75°C @
THERMAL CHARACTERISTICS
Characteristic
Storage Temperature
Thermal Resistance Junction to Case
Symbol
VCEO
VCBO
VEBO
IC
TJmax
PD(max)
Symbol
Tstg
R_θJC
Value
10
15
3.0
20
150
0.300
4.00
Max
– 55 to +150
250
Unit
Vdc
Vdc
Vdc
mAdc
°C
W
mW/°C
Unit
°C
°C/W
DEVICE MARKING
MMBR5031LT1 = 7G
RF AMPLIFIER
TRANSISTOR
NPN SILICON
CASE 318–08, STYLE 6
SOT–23
LOW PROFILE
(TO–236AA/AB)
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage (IC = 1.0 mAdc, IB = 0)
V(BR)CEO
10
—
—
Vdc
Collector–Base Breakdown Voltage (IC = 0.01 mAdc, IE = 0)
V(BR)CBO
15
—
—
Vdc
Emitter–Base Breakdown Voltage (IE = 0.01 mAdc, IC = 0)
V(BR)EBO
3.0
—
—
Vdc
Collector Cutoff Current (VCB = 6.0 Vdc, IE = 0)
ICBO
—
—
10
nAdc
ON CHARACTERISTICS
DC Current Gain (IC = 1.0 mAdc, VCE = 6.0 Vdc)
SMALL–SIGNAL CHARACTERISTICS
hFE
25
—
300
—
Current–Gain — Bandwidth Product
(IC = 5.0 mAdc, VCE = 6.0 Vdc, f = 100 MHz)
fT
—
Collector–Base Capacitance
(VCE = 6.0 Vdc, IE = 0, f = 0.1 MHz)
Ccb
—
Minimum Noise Figure (IC = 1.0 mAdc, VCE = 6.0 Vdc, f = 450 MHz) NFmin
—
Common–Emitter Amplifier Power Gain
(IC = 1.0 mAdc, VCE = 6.0 Vdc, f = 450 MHz)
Gpe
—
NOTE:
1.Case temperature measured on collector lead immediately adjacent to body of package.
1,000
—
—
1.5
2.5
—
17
25
MHz
pF
dB
dB
REV 7
©MMOotoTrOolaR, OIncL.A19R95F DEVICE DATA
MMBR5031LT1
1