MMBR4957LT1 Datasheet, PDF (1/4 Pages) Motorola, Inc – PNP Silicon High-Frequency Transistor

MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
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by MMBR4957LT1/D
The RF Line
PNP Silicon
High-Frequency Transistor
MMBR4957LT1, T3
. . . designed for high–gain, low–noise amplifier oscillator and mixer applica-
tions. Specifically packaged for thick and thin–film circuits using surface mount
components.
• High Gain — Gpe = 17 dB Typ @ f = 450 MHz
• Low Noise — NF = 3.0 dB Typ @ f = 450 MHz
• Available in tape and reel packaging options by adding suffix:
T1 suffix = 3,000 units per reel
T3 suffix = 10,000 units per reel
IC = – 30 mA
HIGH–FREQUENCY
TRANSISTOR
PNP SILICON
MAXIMUM RATINGS
Rating
Symbol
Collector–Emitter Voltage
Collector–Base Voltage
Emitter–Base Voltage
Collector Current — Continuous
Maximum Junction Temperature
Power Dissipation, Tcase = 75°C*
Derate linearly above Tcase = 75°C @
VCEO
VCBO
VEBO
IC
TJmax
PD(max)
THERMAL CHARACTERISTICS
Characteristic
Symbol
Storage Temperature
Tstg
Thermal Resistance Junction to Case*
R_θJC
* Package mounted on 99.5% alumina 10 x 8 x 0.6 mm.
DEVICE MARKING
Value
– 30
– 30
– 3.0
– 30
150
0.278
3.70
Max
– 55 to +150
270
Unit
Vdc
Vdc
Vdc
mAdc
°C
W
mW/°C
Unit
°C
°C/W
MMBR4957LT1, T3 = 7F
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.)
Characteristic
Symbol
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage (IC = –1.0 mAdc, IB = 0)
Collector–Base Breakdown Voltage (IC = –100 µAdc, IE = 0)
Emitter–Base Breakdown Voltage (IE = –100 µAdc, IC = 0)
Collector Cutoff Current (VCB = –10 Vdc, IC = 0)
ON CHARACTERISTICS
V(BR)CEO
V(BR)CBO
V(BR)EBO
ICBO
DC Current Gain (IC = – 2.0 mAdc, VCE = –10 Vdc)
hFE
SMALL–SIGNAL CHARACTERISTICS
Current–Gain — Bandwidth Product
fT
(IE = – 2.0 mAdc, VCE = –10 Vdc, f = 100 MHz)
Collector–Base Capacitance
Ccb
(VCB = –10 Vdc, IE = 0, f = 1.0 MHz)
Common–Emitter Amplifier Power Gain
Gpe
(VCE = –10 Vdc, IC = – 2.0 mAdc, f = 450 MHz)
Noise Figure (IC = – 2.0 mAdc, VCE = –10 Vdc, f = 450 MHz)
NF
Min
– 30
– 30
– 3.0
—
20
—
—
—
—
CASE 318–07, STYLE 6
SOT–23
LOW PROFILE
(TO–236AA/AB)
Typ
—
—
—
—
—
1200
—
17
3.0
Max
—
—
—
– 0.1
150
—
0.8
—
—
Unit
Vdc
Vdc
Vdc
µAdc
—
MHz
pF
dB
dB
REV 6
©MMOotoTrOolaR, OIncL.A19R94F DEVICE DATA
MMBR4957LT1, T3
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