MMBFJ309LT1 Datasheet, PDF (1/6 Pages) Motorola, Inc – JFET VHF/UHF Amplifier Transistor

MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MMBFJ309LT1/D
JFET VHF/UHF Amplifier Transistor
N–Channel
2 SOURCE
MMBFJ309LT1
MMBFJ310LT1
3
GATE
1 DRAIN
MAXIMUM RATINGS
Rating
Drain–Source Voltage
Gate–Source Voltage
Gate Current
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR– 5 Board(1)
TA = 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient
Junction and Storage Temperature
DEVICE MARKING
MMBFJ309LT1 = 6U; MMBFJ310LT1 = 6T
Symbol
VDS
VGS
IG
Symbol
PD
R_qJA
TJ, Tstg
Value
25
25
10
Max
225
1.8
556
– 55 to +150
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Gate–Source Breakdown Voltage (IG = –1.0 µAdc, VDS = 0)
Gate Reverse Current (VGS = –15 Vdc)
Gate Reverse Current (VGS = –15 Vdc, TA = 125°C)
Gate Source Cutoff Voltage
(VDS = 10 Vdc, ID = 1.0 nAdc)
MMBFJ309
MMBFJ310
ON CHARACTERISTICS
Zero–Gate–Voltage Drain Current
(VDS = 10 Vdc, VGS = 0)
Gate–Source Forward Voltage (IG = 1.0 mAdc, VDS = 0)
SMALL–SIGNAL CHARACTERISTICS
MMBFJ309
MMBFJ310
Forward Transfer Admittance (VDS = 10 Vdc, ID = 10 mAdc, f = 1.0 kHz)
Output Admittance (VDS = 10 Vdc, ID = 10 mAdc, f = 1.0 kHz)
Input Capacitance (VGS = –10 Vdc, VDS = 0 Vdc, f = 1.0 MHz)
Reverse Transfer Capacitance (VGS = –10 Vdc, VDS = 0 Vdc, f = 1.0 MHz)
Equivalent Short–Circuit Input Noise Voltage
(VDS = 10 Vdc, ID = 10 mAdc, f = 100 Hz)
  1. FR– 5 = 1.0 0.75 0.062 in.
Unit
Vdc
Vdc
mAdc
Unit
mW
mW/°C
°C/W
°C
Symbol
V(BR)GSS
IGSS
VGS(off)
IDSS
VGS(f)
|Yfs|
|yos|
Ciss
Crss
en
Min
– 25
—
—
– 1.0
– 2.0
12
24
—
8.0
—
—
—
—
3
1
2
CASE 318 – 08, STYLE 10
SOT– 23 (TO – 236AB)
Typ
Max
Unit
—
—
Vdc
—
– 1.0
nAdc
—
– 1.0
µAdc
—
– 4.0
Vdc
—
– 6.5
—
30
mAdc
—
60
—
1.0
Vdc
—
18
mmhos
—
250
µmhos
—
5.0
pF
—
2.5
pF
10
—
nVń ^ǸHz
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Motorola Small–Signal Transistors, FETs and Diodes Device Data
1
© Motorola, Inc. 1997