MMBFJ175LT1 Datasheet, PDF (1/4 Pages) Motorola, Inc – JFET Chopper

MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MMBFJ175LT1/D
JFET Chopper
P–Channel — Depletion
2 SOURCE
MMBFJ175LT1
Motorola Preferred Device
3
GATE
1 DRAIN
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Drain – Gate Voltage
VDG
25
V
Reverse Gate – Source Voltage
VGS(r)
– 25
V
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR– 5 Board(1)
TA = 25°C
Derate above 25°C
Thermal Resistance Junction to Ambient
Junction and Storage Temperature
DEVICE MARKING
Symbol
PD
R_qJA
TJ, Tstg
Max
225
1.8
556
– 55 to +150
Unit
mW
mW/°C
°C/W
°C
MMBFJ175LT1 = 6W
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Gate – Source Breakdown Voltage
(VDS = 0, ID = 1.0 µA)
Gate Reverse Current
(VDS = 0 V, VGS = 20 V)
Gate – Source Cutoff Voltage
(VDS = 15, ID = 10 nA)
ON CHARACTERISTICS
Zero – Gate –Voltage Drain Current ⁽²⁾
(VGS = 0, VDS = 15 V)
Drain Cutoff Current
(VDS = 15 V, VGS = 10 V)
Drain Source On Resistance
m (ID = 500 A)
Input Capacitance
Reverse Transfer Capacitance
VDS = 0, VGS = 10 V
f = 1.0 MHz
v m v ^{1. FR–5 = 1.0 x 0.75 x 0.062 in.}
2. Pulse Test: Pulse Width 300 s, Duty Cycle 2.0%.
Symbol
V(BR)GSS
IGSS
VGS(OFF)
IDSS
ID(off)
rDS(on)
Ciss
Crss
3
1
2
CASE 318 – 08, STYLE 10
SOT– 23 (TO – 236AB)
Min
Max
Unit
30
—
V
—
1.0
nA
3.0
6.0
V
7.0
60
mA
—
1.0
nA
—
125
W
—
11
pF
—
5.5
Thermal Clad is a registered trademark of the Berquist Company.
Preferred devices are Motorola recommended choices for future use and best overall value.
©^MM^oto^oto^rr^oo^ll^aa,
Small–Signal
Inc. 1996
Transistors,
FETs
and
Diodes
Device
Data
1