MMBF2202PT1 Datasheet, PDF (1/6 Pages) Motorola, Inc – P-CHANNEL ENHANCEMENT-MODE TMOS MOSFET

MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MMBF2202PT1/D
™
Low rDS(on) Small-Signal MOSFETs
TMOS Single P-Channel
Field Effect Transistors
Part of the GreenLine™ Portfolio of devices with energy–con-
serving traits.
These miniature surface mount MOSFETs utilize Motorola’s High
Cell Density, HDTMOS process. Low rDS(on) assures minimal
power loss and conserves energy, making this device ideal for use
in small power management circuitry. Typical applications are
dc–dc converters, power management in portable and battery–
powered products such as computers, printers, PCMCIA cards,
cellular and cordless telephones.
• Low rDS(on) Provides Higher Efficiency and Extends Battery Life
• Miniature SC–70/SOT–323 Surface Mount Package Saves
Board Space
1
GATE
™
3 DRAIN
MMBF2202PT1
Motorola Preferred Device
P–CHANNEL
ENHANCEMENT–MODE
TMOS MOSFET
rDS(on) = 2.2 OHM
CASE 419–02, STYLE 7
SC–70/SOT–323
2 SOURCE
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating
Drain–to–Source Voltage
Gate–to–Source Voltage — Continuous
Drain Current — Continuous @ TA = 25°C
Drain Current — Continuous @ TA = 70°C
Drain Current — Pulsed Drain Current (tp ≤ 10 µs)
Total Power Dissipation @ TA = 25°C(1)
Derate above 25°C
Operating and Storage Temperature Range
Thermal Resistance — Junction–to–Ambient
Maximum Lead Temperature for Soldering Purposes, for 10 seconds
DEVICE MARKING
P3
(1) Mounted on G10/FR4 glass epoxy board using minimum recommended footprint.
ORDERING INFORMATION
Device
Reel Size
Tape Width
Quantity
MMBF2202PT1
7″
8 mm embossed tape
3000
MMBF2202PT3
13″
8 mm embossed tape
10,000
GreenLine is a trademark of Motorola, Inc.
HDTMOS is a trademark of Motorola, Inc. TMOS is a registered trademark of Motorola, Inc.
Thermal Clad is a registered trademark of the Berquist Company.
Preferred devices are Motorola recommended choices for future use and best overall value.
Symbol
VDSS
VGS
ID
ID
IDM
PD
TJ, Tstg
R_θJA
TL
Value
Unit
20
Vdc
± 20
Vdc
300
mAdc
240
750
150
mW
1.2
mW/°C
– 55 to 150 °C
833
°C/W
260
°C
REV 1
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